Semiconductor device including vertical transistor and method for manufacturing the same
a technology of semiconductor devices and vertical transistors, which is applied in the direction of semiconductor devices, electrical equipment, capacitors, etc., can solve the problems of difficult to reduce the area of unit cells, and achieve the effect of reducing the area of cells and decreasing the number of process steps
Inactive Publication Date: 2013-05-23
SK HYNIX INC
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- Application Information
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Benefits of technology
This approach effectively reduces the unit cell area compared to conventional layouts like 8F2 and 6F2, decreases process steps, and minimizes parasitic capacitance, enhancing productivity and operational efficiency.
Problems solved by technology
In case of a complicated semiconductor memory apparatus, it is difficult to reduce a unit cell area because the number of transistors included in a unit cell increases.
Method used
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[0029]The present invention will be described in detail with reference to the attached drawings.
[0030]FIGS. 1 and 2 are perspective views illustrating a semiconductor device including a vertical transistor according to an embodiment of the present invention. FIG. 2 shows the semiconductor device of FIG. 1 with a first insulating film omitted.
[0031]Referring to FIG. 1, a semiconductor device including a vertical transistor comprises a plurality of active regions 12 in a pillar shape and separated by a first insulating film 28 from one another. In a direction taken along A-A′, a word line 40 is formed penetrating the plurality of active regions 12 or extending inside of the plurality of active regions 12 to be in a buried shape. A word line insulating film 34 including an insulating material such as an oxide film is formed between the word line 40 and the active region 12. A bottom surface of a lower electrode 50 is formed on the upper portion of the word line 40 in each active region...
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A semiconductor device including a vertical transistor and a method for manufacturing the same may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps. The semiconductor device including a vertical transistor comprises: an active region formed in a semiconductor substrate; a bit line disposed in the lower portion of the active region; a word line buried in the active region; and a capacitor to disposed over the upper portion of the active region and the word line,
Description
CROSS-REFERENCE TO RELATED APPLICATION[0001]The priority of Korean patent application No. 10-2010-0067333 filed on Jul. 13, 2010, the disclosure of which is hereby incorporated in its entirety by reference, is claimed.BACKGROUND OF THE INVENTION[0002]An embodiment of the present invention relates to a semiconductor device including a vertical transistor and a method for manufacturing the same.[0003]In general, a semiconductor is a material which belongs to an intermediate region of a conductor and a nonconductor according to classification of materials based on electrical conductivity. Although a semiconductor is similar to a nonconductor in a pure state, the electrical conductivity of the semiconductor changes by addition of impurities or by other manipulations. The semiconductor has been used to produce a semiconductor device such as a transistor by addition of impurities and connection of the conductor. A semiconductor apparatus refers to an apparatus having various functions per...
Claims
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IPC IPC(8): H01L27/105H01L27/108H10B12/00
CPCH01L27/10852H01L27/10855H01L27/10876H01L28/40H01L27/108H01L29/66666H01L29/7827H01L27/105H01L29/42376H10B12/053H10B12/0335H10B12/033H10B12/00
InventorLEE, KYOUNG HAN
OwnerSK HYNIX INC