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Semiconductor Device Package with Slanting Structures

Inactive Publication Date: 2013-08-22
KING DRAGON INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor device package with slanting structures, making it thinner and more compact. It also includes conductive through holes and thermal metal pads, improving efficiency and reducing thermal resistance. These features help achieve better performance and reliability, especially for high power devices.

Problems solved by technology

Less-expensive plastic-molded QFNs usually limited to applications up to ˜2-3 GHz.
It is usually more expensive due to its construction, and can be used for microwave applications up to 20-25 GHz.
It is hence difficult to hand-solder a QFN package.

Method used

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  • Semiconductor Device Package with Slanting Structures
  • Semiconductor Device Package with Slanting Structures
  • Semiconductor Device Package with Slanting Structures

Examples

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Embodiment Construction

[0019]The present invention will now be described with the preferred embodiments and aspects and these descriptions interpret structure and procedures of the present invention only for illustrating but not for limiting the Claims of the present invention. Therefore, except the preferred embodiments in the specification, the present invention may also be widely used in other embodiments.

[0020]FIG. 1 is cross-sectional view of a semiconductor device package 10 for QFN (quad-flat no-leads) package. The semiconductor device package 10 has a substrate 100 with predetermined through-holes 102 and 104 formed therein. The material of the substrate 100 may be a metal, glass, ceramic, silicon, plastic, BT (bismaleimide triazine), FR4, FR5 or PI (polyimide) etc. In one embodiment, the thickness of the substrate 100 may be about 40-200 micron-meters. It may be a single or multi-layer (wiring circuit) substrate.

[0021]A die 112 with bonding pads 116 thereon is subsequently adhered on the upper su...

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Abstract

A semiconductor device package structure includes a substrate with a via contact pad on top surface of the substrate, a terminal pad on bottom surface of the substrate and a conductive through hole through the substrate, wherein the conductive through hole electrically couples the via contact pad and the terminal pad on the substrate; a die having bonding pads thereon, wherein the die is formed on the top surface of the substrate; a slanting structure formed adjacent to at least one side of the die for carrying conductive traces; and a conductive trace formed on upper surface of the slanting structure to offer path between the bonding pads and the via contact pad.

Description

CROSS-REFERENCE[0001]The present application is a continuation-in-part (CIP) application of a pending application Ser. No. 13 / 566,194, entitled “Semiconductor Device Package with Slanting Structures”, filed on Aug. 3, 2012; and a CIP of application Ser. No. 13 / 348,787, entitled “LED Package with Slanting Structure and Method of the Same”, filed on Jan. 12, 2012, which are incorporated herein by reference in their entirety.FIELD OF THE INVENTION[0002]The present invention relates to a semiconductor device package, and more particularly to a semiconductor device package with slanting structures formed adjacent to the die.BACKGROUND OF THE INVENTION[0003]In the field of semiconductor devices, the device density is increased and the device dimension is reduced, continuously. The demand for the packaging or interconnecting techniques in such high density devices is also increased to fit the situation mentioned above. Flat no-leads packages such as QFN (quad-flat no-leads) and DFN (dual-f...

Claims

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Application Information

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IPC IPC(8): H01L23/498
CPCH01L2224/24998H01L2224/92244H01L2224/73267H01L23/49827H01L2224/32225H01L2224/32245H01L2924/15151H01L23/3677H01L24/25H01L24/32H01L24/82H01L24/92H01L33/62H01L2224/24225H01L2224/2518H01L2224/83855H01L24/24H01L2924/15747H01L2924/12042H01L2924/00H01L33/005H01L33/60H01L2933/0033H01L2933/0058H01L2933/0066
Inventor YANG, WEN KUN
Owner KING DRAGON INT
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