Field-effect transistor and manufacturing method thereof

Abstract

Disclosed are a field-effect transistor and a manufacturing method thereof. The disclosed field-effect transistor includes: a semiconductor substrate; a source ohmic metal layer formed on one side of the semiconductor substrate; a drain ohmic metal layer formed on another side of the semiconductor substrate; a gate electrode formed between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; an insulating film formed on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and a plurality of field electrodes formed on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is based on and claims priority from Korean Patent Application No. 10-2010-0130291, filed on Dec. 17, 2010, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a transistor, and more particularly to a field-effect transistor and a manufacturing method thereof, in which a separate lithography process and its corresponding additional process are not required, and insulating films below field electrodes have different thicknesses.[0004]2. Description of the Prior Art[0005]FIGS. 1A to 1H are views illustrating a method for manufacturing a field-effect transistor, according to a prior art.[0006]As shown in FIG. 1A, on a semiconductor substrate 10 including gallium nitride (GaN), silicon (Si), silicon carbide (SiC), semi-insulating gallium arsenide (GaAs), etc., a...

Images