Multijunction photovoltaic device having sige(SN) and gaasnsb cells

Abstract

A multijunction tandem photovoltaic device is disclosed having a bottom subcell of silicon germanium or silicon germanium tin material and above that a subcell of gallium nitride arsenide antimonide material. The materials are lattice matched to gallium arsenide, which preferably forms the substrate. Preferably, further lattice matched subcells of gallium arsenide, indium gallium phosphide and aluminium gallium arsenide or aluminium indium gallium phosphide are provided.

Description

[0001]The present invention relates to photovoltaic devices having more than one subcell for absorbing different parts of the spectrum of the incident light.BACKGROUND[0002]Multijunction photovoltaic devices comprise a series of subcells each having a light absorbing semiconductor material and a p-n junction therein to separate the photocarriers, to produce the photocurrent. They work by having a top subcell, i.e. that first exposed to the incident light, that has a large bandgap and so absorbs the shorter wavelengths in the incident light only and passes the longer wavelengths, with the next subcell having a smaller bandgap so that it can absorb part of the light passed by the subcell above, and so on. Solar cells are, of course, one kind of photovoltaic device and are ones used to convert sunlight into electricity for the purpose of generating power.[0003]In this document “top” and “bottom” are to be understood in that sense, i.e. the top subcell is that which receives the inciden...

AI Technical Summary

Benefits of technology

Enhances absorption efficiency across a broader spectral range, reduces manufacturing costs and defects, and improves device performance and reliability by ensuring all layers are lattice-matched to the substrate, thereby increasing power conversion efficiency.

Problems solved by technology

The document notes a problem with Ge bottom subcells, which is that because of the small bandgap the current produced by Ge subcells is high compared to GaAs and InGaP top and middle subcells leading to inefficiency.

In this device the lattice matching is limited.

This is produced by changing the composition of the buffer layer while it is grown to change the lattice parameter, which is not only a complex operation but will introduce defects into the structure.

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