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Electrostatic discharge protection device

a protection device and electrostatic discharge technology, applied in semiconductor devices, diodes, electrical apparatus, etc., can solve the problems of limiting the dimension shrinkage of sti diodes, and conventional esd protection devices are not suited to high-speed circuits such as rf interfaces

Active Publication Date: 2015-06-18
MEDIATEK INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The ESD protection device achieves lower threshold voltage and junction capacitance compared to conventional devices, enabling effective protection with reduced capacitive loading, making it suitable for high-speed applications.

Problems solved by technology

However, the design rule of STI limits the dimension shrinkage of the STI diodes.
Also, the conventional ESD protection devices are not suited for high-speed circuits (such as RF interfaces) because the conventional STI diodes and gated diodes shunt a large part of the RF signal to supply (VDD / VSS) lines through high parasitic junction capacitance.

Method used

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Embodiment Construction

[0019]The following description is a mode for carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims. Wherever possible, the same reference numbers are used in the drawings and the descriptions to refer the same or like parts.

[0020]The present invention will be described with respect to particular embodiments and with reference to certain drawings, but the invention is not limited thereto and is only limited by the claims. The drawings described are only schematic and are non-limiting. In the drawings, the size of some of the elements may be exaggerated and not drawn to scale for illustrative purposes. The dimensions and the relative dimensions do not correspond to actual dimensions to practice the invention.

[0021]FIG. 1 is a circuit diagram of one exemplary embodiment of an electrostatic ...

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Abstract

The invention provides an electrostatic discharge (ESD) protection device. The ESD protection device includes a semiconductor substrate having an active region, a first well region having a first conductive type formed in the active region, a first doped region having the first conductive type formed in the first well region, a first metal contact disposed on the first doped region, and a second metal contact disposed on the active region, connecting to the first well region, wherein no doped region is formed between the second metal contact and the first well region.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation of pending U.S. application Ser. No. 14 / 108,559, filed on Dec. 17, 2013, which claims the benefit of U.S. Provisional Application No. 61 / 755,248, filed on Jan. 22, 2013, the entireties of which are incorporated by reference herein.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to an electrostatic discharge (ESD) protection device, and in particular, to an ESD protection device formed by a Schottky diode for an input / output (I / O) device.[0004]2. Description of the Related Art[0005]Requirements for electrostatic discharge (ESD) protection devices for an input / output (I / O) device are excellent ESD protection and low capacitive loading. The conventional ESD protection devices for an input / output (I / O) device include shallow trench isolation (STI) diodes or gated diodes. However, the design rule of STI limits the dimension shrinkage of the STI diodes. Also, the c...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L27/02H01L29/47H01L29/872
CPCH01L27/0255H01L29/47H01L29/872H01L29/0619H01L29/0649H01L29/402H01L29/78
Inventor ZENG, ZHENGKO, CHING-CHUNGHUANG, BO-SHIH
Owner MEDIATEK INC