Semiconductor device, related manufacturing method, and related electronic device

a semiconductor device and manufacturing method technology, applied in the direction of semiconductor devices, electrical devices, transistors, etc., can solve the problems of adverse effects on the performance of the ldmos device, achieve the effect of effectively blocking an electric current, advantageously, and achieve desirable quality and/or performance of the semiconductor devi

Active Publication Date: 2015-07-02
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007]The diode may effectively block an electric current from undesirably substantially flowing into the first-type substrate when a laterally diffused metal oxide semiconductor (LDMOS) transistor structure of the semiconductor device operates in an inductive load mode; therefore, the semiconductor device may function properly. Advantageously, desirable quality and / or performance of the semiconductor device may be substantially ensured and / or attained.

Problems solved by technology

As a result, a large electric current may undesirably flow into the P-type substrate, such that the performance of the LDMOS device may be adversely affected.

Method used

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  • Semiconductor device, related manufacturing method, and related electronic device
  • Semiconductor device, related manufacturing method, and related electronic device
  • Semiconductor device, related manufacturing method, and related electronic device

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Embodiment Construction

[0031]Example embodiments of the present invention are described with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Embodiments of the present invention may be practiced without some or all of these specific details. Well known process steps and / or structures may not have been described in detail in order to not unnecessarily obscure the present invention.

[0032]The drawings and description are illustrative and not restrictive. Like reference numerals may designate like (e.g., analogous or identical) elements in the specification. Repetition of description may be avoided.

[0033]The relative sizes and thicknesses of elements shown in the drawings are for facilitate description and understanding, without limiting the present invention. In the drawings, the thicknesses of some layers, films, panels, regions, etc...

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Abstract

A semiconductor device may include a first-type substrate. The semiconductor device may further include a second-type well configured to form a PN junction with the first-type substrate. The semiconductor device may further include a diode component configured to form a diode with the second-type well. The diode may be connected to the PN junction in a reverse series connection. The second-type may be N-type if the first-type is P-type, and wherein the second-type may be P-type if the first-type is N-type.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority to and benefit of Chinese Patent Application No. 201310754079.2, filed on 31 Dec. 2013, the Chinese Patent Application being incorporated herein by reference in its entirety.BACKGROUND OF THE INVENTION[0002]The present invention is related to a semiconductor device, a method for manufacturing the semiconductor device, and an electronic device that includes the semiconductor device.[0003]In semiconductor devices, laterally diffused metal oxide semiconductor (LDMOS) transistor devices may have desirable performance characteristics, such as desirable thermal stability, frequency stability, durability, etc. Therefore, LDMOS transistor devices have been widely used in code division multiple access (CDMA) devices, wideband code division multiple access (WCDMA) devices, digital televisions, etc.[0004]FIG. 1 shows a schematic cross-sectional view that illustrates structures of an LDMOS transistor device (or LDMOS d...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/78H01L21/8234H01L29/872H01L27/07H01L29/66H01L21/265
CPCH01L29/782H01L29/66681H01L21/26513H01L21/823418H01L29/66143H01L27/0727H01L29/872H01L29/0619H01L29/0638H01L29/0653H01L29/47H01L29/66659H01L29/7835
Inventor WANG, MINGMA, QIANCHENGCHENG, YONGTENG, LIHUA
Owner SEMICON MFG INT (SHANGHAI) CORP
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