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Resistive random access memory and method of fabricating the same

a random access memory and resistive technology, applied in the field of resistive random access memory, can solve the problem of degrading the so-called “high-temperature data retention”

Active Publication Date: 2015-10-08
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a way to make a memory that can hold data even at high temperatures. This solves a problem that previously existed with the memory.

Problems solved by technology

However, the currently used titanium / hafnium oxide (Ti / HfO2) type resistive random access memory is often difficult to stay in the low-resistance state at a high temperature, which may degrade the so-called “high-temperature data retention”.

Method used

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  • Resistive random access memory and method of fabricating the same
  • Resistive random access memory and method of fabricating the same
  • Resistive random access memory and method of fabricating the same

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second embodiment

[0028]The mechanism of switching the states of the conducting layer 106 and the resistance variable layer 108 between the high-resistance state and the low-resistance state will be described in the second embodiment with reference to FIG. 5. Besides, it is should be mentioned that, the embodiment shown in FIG. 3 discloses that the conductive layer 106 is formed, and then the resistance variable layer 108 is formed; however, the order of forming these two film layers is not limited herein. In another embodiment, the resistance variable layer is formed on the first electrode layer 102, and then the conductive layer is formed on the resistance variable layer.

[0029]As shown in FIG. 4, a second electrode layer 110 is formed on the stacked structure 104, and the fabrication of the resistive random access memory is completed. The material, the thickness, and the fabricating method of the second electrode layer 110 are the same as those of the first electrode layer 102 and thus will not be ...

first embodiment

[0031]As shown in FIG. 5, in the present embodiment, the resistive random access memory includes a first electrode layer 102, a second electrode layer 110, and a stacked structure 104 which are disposed on the substrate 100, and the stacked structure 104 is disposed between the first electrode layer 102 and the second electrode layer 110. The stacked structure 104 includes a conductive layer made of HfOx and a resistance variable layer made of HfOy, wherein x102, the second electrode layer 110, and the stacked structure 104 may be same as those described in the first embodiment and thus will not be further described. The following description with reference to FIG. 5 will be mainly directed to a possible operating mechanism of the resistive random access memory.

[0032]In FIG. 5, the structure made of the first electrode layer 102, the second electrode layer 110, and stacked structure 104 will be described as a memory unit M hereinafter. Since the resistance variable layer 108 is subs...

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Abstract

A resistive random access memory includes a first electrode layer, a second electrode layer, and a stacked structure disposed between the first electrode layer and the second electrode layer. The stacked structure includes a conductive layer and a resistance variable layer. The material of the conductive layer includes HfOx, the material of the resistance variable layer includes HfOy, and x<y. Additionally, the diffusion rate of oxygen ions in the conductive layer is lower than the diffusion rate of the oxygen ions in metal.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the priority benefit of Taiwan application serial no. 103112328, filed on Apr. 2, 2014. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The invention generally relates to a memory and a method of fabricating the same, and in particular, to a resistive random access memory and a method of fabricating the same.[0004]2. Description of Related Art[0005]The resistive random access memory (RRAM) is a memory unit which has been widely studied recently because of its advantages of high memory density (e.g., the memory unit occupies a small area), fast operating speed, low power consumption, and low costs. According to the principle of operating the RRAM, when a high voltage is applied to a dielectric material, a conductive path may be formed within the dielectric material, s...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L45/00
CPCH01L45/146H01L45/06H01L45/1608H01L45/1253H01L45/1233H10N70/24H10N70/826H10N70/8833H10N70/021H10N70/231H10N70/841
Inventor CHANG, SHUO-CHEHO, CHIA-HUA
Owner WINBOND ELECTRONICS CORP