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Semiconductor device

a technology of semiconductors and devices, applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problems of metal silicide layer , over-polishing issue, and worsening of dishing effect, so as to achieve the effect of avoiding dishing

Active Publication Date: 2017-06-22
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides semiconductor devices with increased device density and reduced dishing effect during the planarization process. This is achieved by the formation of multiple assist structures in the first well region, which are electrically floating or connected to contact plugs.

Problems solved by technology

Consequently, over-polishing issue, also known as dishing effect, is often found during the planarization process.
During this planarization process, the dishing effect is worsened: the metal silicide layer 108 may be damaged by this planarization process.
It is therefore concluded that the semiconductor device integrated with Schottky diode faces difficulties in the fabrication processes, it even renders adverse impacts to IC reliability.

Method used

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Embodiment Construction

[0019]In the following description, numerous specific details are set forth, such as particular structures, components, materials, dimensions, processing steps and techniques, in order to provide a thorough understanding of the present invention. However, it will be appreciated by one of ordinary skill in the art that the invention maybe practiced without these specific details. In other instances, well-known structures or processing steps have been described in detail in order to avoid obscuring the invention.

[0020]It will be understood that when an element is referred to as being “formed” on another element, it can be directly or indirectly, formed on the given element by growth, deposition, etch, attach, connect, or couple. And it will be understood that when an elements or a layer is referred to as being “on”, “connected to”, or “coupled to” another element or layer, it can be directly on, connected or coupled to the other element or layer or intervening elements or layers may b...

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PUM

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Abstract

A semiconductor device include a substrate, a first well region formed in the substrate, a first isolation structure formed in the first well region, a Schottky barrier structure formed on the first well region, and a plurality of assist structures formed on the first well region. The substrate includes a first conductivity type, the first well region includes a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other. The assist structures physically contact the first well region.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]This invention relates to a semiconductor device, and more particularly, to a semiconductor device integrated with a Schottky diode.[0003]2. Description of the Prior Art[0004]A Schottky diode is a unipolar device using electrons as carriers. Since the carrier recombination is nearly eliminated, the switching speed of the Schottky diode is high. Moreover, in response to a low forward bias voltage (Vf), the Schottky diode has higher forward current and shorter reverse recovery time (tRR). And high-frequency signals produced by the Schottky diode can be turned-off quicker than conventional PN junction devices.[0005]Please refer to FIGS. 1 and 2, which are schematic drawings illustrating a conventional semiconductor device integrated with Schottky diode at intermediate stages of fabrication. As shown in FIG. 1, the conventional semiconductor device integrated with Schottky diode 100 includes a substrate 102, a large opening...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/872H01L29/06
CPCH01L29/0623H01L29/8725H01L29/872H01L29/0649
Inventor HSIAO, SHIH-YINYANG, CHING-CHUNG
Owner UNITED MICROELECTRONICS CORP