Unlock instant, AI-driven research and patent intelligence for your innovation.

Diamond Semiconductor System and Method

a semiconductor and diamond technology, applied in the field of semiconductor systems and fabrication methods, can solve the problems of limited development of practical diamond based semiconductors, difficulty in fabricating quality n-type layers of diamonds, and limited application of diamond based semiconductor devices. to achieve the effect of reducing the resistive pressure capability of diamond latti

Inactive Publication Date: 2018-03-08
KHAN ADAM
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a method of making diamond semiconductors by introducing small amounts of acceptor dopant atoms into a diamond material. This results in the creation of ion tracks and a reduction in resistive pressure capability. The introduction of additional dopant atoms through the ion tracks can also decrease the diamond's ability to conduct electricity. By controlling the amount of dopant atoms introduced and annealing the diamond material, researchers hope to create innovative materials with improved semiconductor properties.

Problems solved by technology

However, practical diamond based semiconductor device applications remain limited.
One issue that has limited the development of practical diamond based semiconductors is the difficulty of fabricating quality n-type layers in diamonds.
While attempts have been made to improve n-type diamond fabrication based on limiting the concentration of vacancy created defects, the difficulties associated with fabricating quality n-type layers in diamond has yet to be sufficiently resolved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Diamond Semiconductor System and Method
  • Diamond Semiconductor System and Method
  • Diamond Semiconductor System and Method

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0025]FIG. 1 shows a block diagram of the method 100 for fabricating layers within diamond material. The method 100 may include a first step 102 of selecting a diamond material having a diamond lattice structure. The diamond material is intrinsic diamond. Intrinsic diamond is diamond that has not been intentionally doped. Doping may introduce impurities for the purpose of giving the diamond material electrical characteristics, such as, but not limited to, n-type characteristics and p-type characteristics. The diamond material may be a single crystal or polycrystalline diamond.

[0026]FIG. 2A is a perspective view of a model of an intrinsic diamond thin film wafer 200. Though not limited to any particular diamond material, in one embodiment, the diamond material of method 100 is the intrinsic diamond thin film wafer 200. The intrinsic diamond thin film wafer 200 may include a diamond layer 202, a silicon dioxide layer (SiO2) 204, and a silicon wafer layer 206. Diamond layer 202 may be,...

second embodiment

[0040]FIG. 4 shows a block diagram of the method 400 for fabricating layers within diamond material. The first step of method 400 may be the same as the first step 102 of method 100, which includes selecting a diamond material having a diamond lattice structure.

[0041]The second step 402 of method 400 may include cleaning the diamond material to remove surface contaminants. For example, second step 402 may include cleaning the intrinsic diamond thin film wafer 200 (see FIG. 2). The cleaning may be a strong clean, for example but not limited to, a standard diffusion clean, known to those having skill in the art. One example, of such a diffusion clean includes: applying a 4:1 solution of H2SO4 / H2O2 for 10 minutes; applying a solution of H2O2 for 2.5 minutes; applying a 5:1:1 solution of H2O / H2O2 / HCL for 10 minutes; applying a solution of H2O2 for 2.5 minutes; and heat spin drying for 5 minutes.

[0042]The third step 404 of method 400 may include subjecting the diamond material to a pre-i...

third embodiment

[0050]FIG. 5A and FIG. 5B show a block diagram of the method 500 for fabricating layers within diamond material. Method 500 provides a process for fabricating n-type layers within diamond semiconductors for a P+-i-N diode. The first step of method 500 may be the same as the first step 102 of method 100, which includes selecting a diamond material having a diamond lattice structure.

[0051]FIG. 6 shows a top view of an exemplary model of a P+-i-N diode 600 that may be fabricated according to method 500. P+-i-N diode 600 may include a lightly doped semiconductor region (i) (for example, see FIG. 8, 804), between a pt-type semiconductor region 608, and an n-type semiconductor region 606. The method of 500 with SRIM, Stopping and Range of ions in Matter, modeling provides a path for fabricating P+-i-N diodes that approach theoretical projections. In one embodiment, the P+-i-N diode 600 may include the lightly doped semiconductor region (i) 804 of a depth of approximately 10 nm, between a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2 / Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of U.S. Provisional Application No. 61 / 513,569, filed Jul. 30, 2011; U.S. application Ser. No. 13 / 273,467, filed Oct. 14, 2011; and U.S. application Ser. No. 14 / 581,030, filed Dec. 23, 2014.BACKGROUNDField[0002]This invention is generally related to semiconductor systems and fabrication methods, and more particularly to a system and method for fabricating diamond semiconductors.Background[0003]Diamond possesses favorable theoretical semiconductor performance characteristics. However, practical diamond based semiconductor device applications remain limited. One issue that has limited the development of practical diamond based semiconductors is the difficulty of fabricating quality n-type layers in diamonds. While attempts have been made to improve n-type diamond fabrication based on limiting the concentration of vacancy created defects, the difficulties associated with fabricating quality n-type layers in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/04H01L21/22H01L29/868H01L29/66H01L29/16
CPCH01L21/22H01L21/0405H01L2924/0002H01L29/868H01L21/0415H01L29/1602H01L29/6603H01L2924/00
Inventor KHAN, ADAM
Owner KHAN ADAM