Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Integrated electronic device with a redistribution region and a high resilience to mechanical stresses

a technology of integrated electronic devices and mechanical stresses, applied in the direction of solid-state devices, electric devices, basic electric elements, etc., can solve problems such as stress, and achieve the effect of high thermal budg

Inactive Publication Date: 2019-01-31
STMICROELECTRONICS SRL
View PDF6 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes an integrated electronic device with a conductive region and a barrier structure. The device also includes a frontal dielectric layer and a second coating layer. The technical effect of this design is to improve the performance and reliability of the electronic device.

Problems solved by technology

In particular, the stresses arise for example in the case in which the fabrication process includes the execution of steps with a high thermal budget.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated electronic device with a redistribution region and a high resilience to mechanical stresses
  • Integrated electronic device with a redistribution region and a high resilience to mechanical stresses
  • Integrated electronic device with a redistribution region and a high resilience to mechanical stresses

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0037]the present integrated electronic device is shown in FIG. 2, where it is indicated with 40. In particular, FIG. 2 shows only an upper portion of the integrated electronic device 40, given that the elements disposed underneath the third dielectric layer 14 are not shown.

[0038]This having been said, the first coating layer, here indicated with 41, covers the top and the sides of an upper portion of the redistribution layer 25 and is disposed at a distance from the first dielectric layer 11, i.e., it is physically separated from the latter. Furthermore, the first coating layer 41 is physically separated from the first patterned barrier layer 22 and from the patterned seed layer 24, given that it extends at the bottom to a height which is higher than the maximum height reached by the patterned seed layer 24. Consequently, the first coating layer 41 leaves a lower portion of the redistribution layer 25 laterally exposed, together with portions of the patterned seed layer 24 and of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessesaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

An integrated device includes a semiconductor body and a dielectric layer bounded by a surface. A conductive region of a first metal material forms a via region extending into a hole passing through the dielectric layer, and an overlaid redistribution region which extends over the surface. At least one barrier region of a second metal material extends into the hole and surrounds the via region, and the barrier region furthermore extending over the surface. A first coating layer of a third metal material covers the top and the sides of an upper portion of the redistribution region at a distance from the surface. A second coating layer of a fourth metal material extends at a distance from the surface and covers the first coating layer, and covers laterally a lower portion of the redistribution region which is disposed on top of portions of the barrier region extending over the surface.

Description

BACKGROUNDTechnical Field[0001]The present disclosure relates to an integrated electronic device, which includes a redistribution region and has a high resilience to mechanical stresses.Description of the Related Art[0002]As is known, in the field of technologies for fabricating semiconductor circuits, reference is generally made to the redistribution layer (RDL) in order to indicate an additional metal layer of an integrated circuit (“chip”) formed within a die, which allows the input / output pads (I / O) formed within the same die to be rendered electrically accessible. In other words, the redistribution layer is a metal layer connected to the I / O pads, to which the wires which allow the ‘wire bonding’ may, for example, be connected in different positions with respect to the positions in which the pads are disposed. The redistribution layer thus allows, for example, the processes of electrical connection between chips to be simplified.[0003]One example of use of the redistribution la...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H01L23/522H01L21/768H01L23/532
CPCH01L2224/04042H01L23/53238H01L2224/03462H01L2224/05009H01L21/76846H01L21/76852H01L21/76873H01L21/7688H01L2224/05017H01L2224/0508H01L2224/05181H01L2224/05166H01L2224/05027H01L2224/05187H01L2224/05083H01L2224/05084H01L2224/05147H01L2224/05558H01L2224/05644H01L2224/05564H01L2224/05583H01L2224/05563H01L2224/4809H01L2224/05582H01L2224/05655H01L2224/48175H01L2924/04941H01L24/03H01L24/05H01L24/48H01L23/5226H01L21/76802H01L2224/03005H01L21/76885H01L23/5283H01L24/02H01L2221/1078H01L2224/0233H01L2224/02331H01L2224/0239H01L2224/03001H01L2224/03464H01L2224/0347H01L2224/03614H01L2224/0381H01L2224/03825H01L2224/039H01L2224/03901H01L2224/03914H01L2224/05008H01L2224/05548H01L2224/05566H01L2224/48091H01L2224/48247H01L2924/00014H01L2924/351H01L2924/00012H01L2924/01029H01L2924/01015H01L2924/01074H01L2924/01042H01L2924/01028H01L2224/034H01L2924/01022H01L2924/01073H01L2924/04953H01L2924/01046H01L2924/01079H01L2224/45099
Inventor VENEGONI, IVANMILANESI, FRANCESCAPIPIA, FRANCESCO MARIASCIARRILLO, SAMUELECOLPANI, PAOLO
Owner STMICROELECTRONICS SRL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com