Manufacturing method of vapor chamber

Abstract

A vapor chamber structure includes a main body formed of a metal plate and a ceramic plate. The metal plate and the ceramic plate are closed to each other to define a chamber therebetween; and the chamber is internally provided with a wick structure, a support structure, and a working fluid. The metal plate and the ceramic plate are connected to each other via welding or a direct bonding copper process, and the support structure is connected to between the metal plate and the ceramic plate also via welding or the direct bonding copper process. By contacting the ceramic plate of the vapor chamber with a heat source packaged in a ceramic material to transfer heat, the problem of crack at an interface between the vapor chamber and the heat source due to thermal fatigue can be overcome. A manufacturing method of the above-described vapor chamber is also disclosed.

Description

[0001]The present application is a continuation in part of U.S. patent application Ser. No. 13 / 274,358, filed on Oct. 17, 2011.FIELD OF THE INVENTION[0002]The present invention relates to a vapor chamber structure, and more particularly to a vapor chamber structure formed of a metal plate and a ceramic plate to overcome the problem of crack at an interface between a vapor chamber and a heat source due to thermal fatigue. The present invention also relates to a manufacturing method of the above described vapor chamber structure.BACKGROUND OF THE INVENTION[0003]The progress in semiconductor technology enables various integrated circuits (ICs) to have a gradually reduced volume. For the purpose of processing more data, the number of computing elements provided on the presently available ICs is several times higher than that on the conventional ICs of the same volume. When the number of computing elements on the ICs increases, the heat generated by the computing elements during the oper...

AI Technical Summary

Benefits of technology

The present invention is about a new vapor chamber structure and its manufacturing method that solves the problem of cracking at the interface between the vapor chamber and its heat source due to thermal fatigue. This is achieved by applying a ceramic plate in the vapor chamber structure that connects to a metal plate, as they have close thermal expansion coefficients. This solution prevents the vapor chamber from expanding or contracting too quickly in relation to the heat source, reducing the likelihood of cracking.

Problems solved by technology

Thus, it is always an important issue to properly provide a heat dissipation device for ICs.

However, in considering the reliability of the electronic device, the use of a heat dissipation structure with cooling fans and heat pipes would usually have adverse influence on the overall reliability of the electronic device.

In addition, heat stress is another potential factor having adverse influence on the reliability of the electronic device in contact with the heat dissipation device.

In a high-brightness LED, an interface between the aluminum or copper material of the heat dissipation device and the ceramic packaging material of the LED sapphire chip tends to crack due to thermal fatigue caused by the difference in the thermal expansion coefficients thereof when the LED has been used over a long period of time.

The interface crack in turn causes a rising thermal resistance at the interface.

For the high-brightness LED products, the rising thermal resistance at the heat dissipation interface would result in heat accumulation to cause burnout of the LED chip and bring permanent damage to the LED.

In brief, the difference between the thermal expansion coefficients of the ceramic packaging material of a heat source and the metal material of a heat dissipation device would cause crack at an interface between the heat source and the heat dissipation device due to thermal fatigue; and it is necessary to work out a way to solve the problem of such crack at the interface.

Images