Unlock instant, AI-driven research and patent intelligence for your innovation.

Apparatus and method for controlling ion beam properties using electrostatic filter

a technology of electrostatic filter and apparatus, applied in the direction of electrical apparatus, electric discharge tube, basic electric elements, etc., can solve the problem of complex beam focusing and other problems

Active Publication Date: 2020-05-07
APPLIED MATERIALS INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes an apparatus and system for controlling an ion beam in an ion implantation system. The system includes an ion source, a beamline, an electrostatic filter with a main chamber and a beam tunnel, and an electrostatic tuner with at least one tuner electrode. The method includes adjusting the beam height of the ion beam by applying a tuning voltage to the tuning electrode in the beam tunnel, which leads the ion beam through the electrodes in the main chamber and beam tunnel. This invention allows for better control and adjustment of the ion beam in an ion implantation system, improving the accuracy of the process.

Problems solved by technology

Notably, changes in the suppression voltage applied to suppression electrodes may cause beam focusing to vary in a complex manner.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for controlling ion beam properties using electrostatic filter
  • Apparatus and method for controlling ion beam properties using electrostatic filter
  • Apparatus and method for controlling ion beam properties using electrostatic filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020]A system and method in accordance with the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, where embodiments of the system and method are shown. The system and method may be embodied in many different forms and are not be construed as being limited to the embodiments set forth herein. Instead, these embodiments are provided so this disclosure will be thorough and complete, and will fully convey the scope of the system and method to those skilled in the art.

[0021]For the sake of convenience and clarity, terms such as “top,”“bottom,”“upper,”“lower,”“vertical,”“horizontal,”“lateral,” and “longitudinal” will be used herein to describe the relative placement and orientation of these components and their constituent parts, with respect to the geometry and orientation of a component of a semiconductor manufacturing device as appearing in the figures. The terminology will include the words specifically mentioned, derivatives...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An apparatus and method are provided. In one embodiment. an apparatus may include a main chamber, where the main chamber includes an electrode assembly. The electrode assembly may include a plurality of electrodes arranged between a chamber entrance and a chamber exit of the main chamber. The apparatus may include a beam tunnel, connected to the chamber entrance, configured to conduct an ion beam to the main chamber; and an electrostatic tuner, disposed in the beam tunnel, the electrostatic tuner comprising at least one tuner electrode, independently coupled to a tuner voltage assembly.

Description

FIELD OF THE DISCLOSURE[0001]The disclosure relates generally to techniques for implanting substrates, and more particularly, to components and techniques for improving ion beams transported through energy filters.BACKGROUND OF THE DISCLOSURE[0002]Ion implantation is a process of introducing dopants or impurities into a substrate via bombardment. In semiconductor manufacturing, the dopants are introduced to alter electrical, optical, or mechanical properties.[0003]Ion implantation systems may comprise an ion source and a series of beam-line components. The ion source may comprise a chamber where ions are generated. The ion source may also comprise a power source and an extraction electrode assembly disposed near the chamber. The beam-line components, may include, for example, a mass analyzer, a first acceleration or deceleration stage, a collimator, and a second acceleration or deceleration stage. Much like a series of optical lenses for manipulating a light beam, the beam-line comp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01J37/05H01J37/317
CPCH01J2237/057H01J37/3171H01J37/05H01J2237/30477
Inventor LIKHANSKII, ALEXANDRESINCLAIR, FRANKCHANG, SHENGWU
Owner APPLIED MATERIALS INC