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Method for fabricating neuron oscillator including thermal insulating device

a neuron oscillator and thermal insulation technology, applied in the field of oscillatory neural networks, can solve the problems of oscillation in the neuron oscillator, hardware realization is challenged, and the conventional von-neumann architecture is inefficient in solving certain non-deterministic polynomial time (np) hard problems

Active Publication Date: 2021-08-05
INDIAN INSTITUTE OF TECHNOLOGY BOMBAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text is about a way to cause a heating effect using a thermally insulating device. The device prevents heat from escaping, which leads to a buildup of heat inside. This buildup can cause the device to overheat and start a fire. The technical effect of this invention is to provide a way to create a controlled heating effect without the risk of causing damage or injury.

Problems solved by technology

A conventional Von-Neumann architecture is inefficient in solving certain non-deterministic polynomial time (NP) hard problems like a pattern recognition, a combinatorial optimization etc.
However, the hardware realization is challenged by issues like a frequency tunability, a complex circuit involving 10 to 20 transistors, a high power density etc.
In an embodiment, the low resistance state of the thermal insulating device generates charging and the high resistance state of the thermal insulating device generates discharging of the capacitor resulting in oscillations in the neuron oscillator.

Method used

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  • Method for fabricating neuron oscillator including thermal insulating device
  • Method for fabricating neuron oscillator including thermal insulating device
  • Method for fabricating neuron oscillator including thermal insulating device

Examples

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Embodiment Construction

[0036]The embodiments herein and the various features and advantageous details thereof are explained more fully with reference to the non-limiting embodiments that are illustrated in the accompanying drawings and detailed in the following description. Descriptions of well-known components and processing techniques are omitted so as to not unnecessarily obscure the embodiments herein. Also, the various embodiments described herein are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments. The term “or” as used herein, refers to a non-exclusive or, unless otherwise indicated. The examples used herein are intended merely to facilitate an understanding of ways in which the embodiments herein can be practiced and to further enable those skilled in the art to practice the embodiments herein. Accordingly, the examples should not be construed as limiting the scope of the embodiments herein.

[0037]As is traditional i...

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Abstract

Accordingly the embodiments herein provide a method for fabricating a neuron oscillator (200a). The neuron oscillator (200a) includes a thermal insulating device connected with a resistor and a capacitor in series to produce self-sustained oscillations, where the resistor and the capacitor are arranged in parallel manner. The neuron oscillator (200a) eliminates a requirement of an additional compensation circuitry for a consistent performance over a time under heating issues. Additionally, an ON / OFF ratio of the neuron oscillator (200a) improves to a broader resistor range. Further, a presence of tunable synaptic memristor functionality of the neuron oscillator (200a) provides a reduced fabrication complexity to a large scale ONN. An input voltage required for the neuron oscillator (200a) is low (2-3 V) which makes it suitable to use with existing circuitries without using any additional converters. Additionally, an amplitude of the oscillations is a significant fraction of an applied bias which eliminates a need for an amplification.

Description

FIELD OF INVENTION[0001]The present disclosure relates to oscillatory neural networks, and more specifically to a method for fabricating a neuron oscillator including a thermal insulating device. The present application is based on, and claims priority from an Indian Application Number 201821019896 filed on 28th May, 2018 and PCT / IN2019 / 050416 filed on 28th May, 2019 the disclosure of which is hereby incorporated by reference hereinBACKGROUND OF INVENTION[0002]An energy efficient computing have huge demand in electronic devices such as smartphones, tablets etc. A conventional Von-Neumann architecture is inefficient in solving certain non-deterministic polynomial time (NP) hard problems like a pattern recognition, a combinatorial optimization etc. Various neural network architectures are being explored extensively which are energy efficient and can be used for multi-tasking operations. An oscillatory neural network (ONN) is the neural network which uses phase dynamics of oscillator n...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H03B1/02H03B5/20G06N3/04G06N3/063
CPCH03B1/02G06N3/063G06N3/04H03B5/20H03B28/00G06N3/065H03B29/00
Inventor LASHKARE, SANDIP GANGADHARRAOSARASWAT, VIVEKKUMBHARE, PANKAJ SUBHASHGANGULY, UDAYAN
Owner INDIAN INSTITUTE OF TECHNOLOGY BOMBAY
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