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Nanostructured shapes having anisotropic absorption and emission

a nanostructured, emission-based technology, applied in the direction of instruments, polarising elements, optical elements, etc., can solve the problems of limited life time of such dye molecules and small anisotropy of the emission of dyes, and achieve the effect of high quantum efficiency

Pending Publication Date: 2021-08-12
UNIV GENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a way to create semiconductor materials that can efficiently transfer electrons and holes to a quantum dot, which has a high quantum efficiency. This can be done by using nanostructured shapes that help to optimize the transfer of energy. Overall, this technology can improve the performance of electronic devices that use quantum dots.

Problems solved by technology

However, such dyes molecules have narrow absorption bands and the anisotropy of the emission of such dyes is usually small.
Furthermore the life time of such dye molecules is limited.

Method used

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  • Nanostructured shapes having anisotropic absorption and emission
  • Nanostructured shapes having anisotropic absorption and emission
  • Nanostructured shapes having anisotropic absorption and emission

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Embodiment Construction

[0149]This disclosure will be described with respect to particular embodiments and with reference to certain drawings. The drawings are only schematic and non-limiting. The size of some elements may be exaggerated and not drawn on scale for illustrative purposes. The dimensions and the relative dimensions do not correspond to actual reductions to practice of the invention.

[0150]FIG. 1 schematically illustrates a first example of a nanostructured shape 100 according to the disclosure. The nanostructured shape 100 comprises a first part 101 comprising a CdSe quantum dot as emitting material 110 surrounded by a CdS shell as first absorbing material 108. The first part 101 has a rod-like shape with a long axis L and a short axis S. In the example shown in FIG. 1 the long axis L corresponds with the z-axis while the short axis S corresponds with the x-axis. The first part 101 has a length l measured along the long axis L and a width w measured along the short axis S. The length l is larg...

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Abstract

Nanostructured shapes comprising at least a first part and a second part. The first part has a longitudinal axis L and comprises a first absorbing material and an emitting material. The second part is connected to the first part and comprises a second absorbing material. The second part mainly absorbs light with direction of polarization other than the long axis L of the first part, and the nanostructured shape emits light mainly polarized along the long axis L of the first part. The disclosure further relates to an assembly of nanostructured shapes, to a method of synthesizing nanostructured shapes and to a polarizing light emitting plate comprising such nanostructured shapes.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a national phase entry under 35 U.S.C. § 371 of International Patent Application PCT / EP2019 / 065914, filed Jun. 17, 2019, designating the United States of America and published as International Patent Publication WO 2019 / 243275 A1 on Dec. 26, 2019, which claims the benefit under Article 8 of the Patent Cooperation Treaty to European Patent Application Serial No. 18178194.9, filed Jun. 18, 2018.TECHNICAL FIELD[0002]This disclosure relates to a nanostructured shape and to an assembly of nanostructured shapes. The disclosure further relates to a method of synthesizing such nanostructured shapes. Furthermore, the disclosure relates to a polarizing light emitting plate comprising at least one nanostructured shape or at least one assembly of nanostructured shapes.BACKGROUND[0003]Quantum dots, embedded in semiconductor nanoparticles with a higher bandgap, can provide efficient photoluminescence. For particles dispersed in a me...

Claims

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Application Information

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IPC IPC(8): H01L31/0352C09K11/88H01L31/055H01L31/0296H01L31/18G02F1/1335G02B5/30
CPCH01L31/035227C09K11/883H01L31/055B82Y20/00H01L31/1828G02F1/133528G02B5/3025H01L31/0296G02F1/017G02F1/13362G02F2202/36C09K11/02G02F1/133614Y02E10/52B82Y40/00G02B2207/101
Inventor NEYTS, KRISTIAANUSSEMBAYEV, YERZHAN
Owner UNIV GENT