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Segmented coil for generating plasma in plasma processing equipment

a technology of generating plasma and segmented coils, which is applied in the field of segmented coils for transformer coupled plasma sources (tcp) sources, can solve the problems of reducing the uniformity of etching, and not providing the same uniformity at all operating pressures, so as to improve the spatial uniformity of rf power coupling and improve the uniformity of plasma and process.

Inactive Publication Date: 2014-12-09
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes an apparatus and method for generating a transformer coupled plasma (TCP) in a reaction chamber. The apparatus includes a coil with two segments connected in series, and a radio frequency source that resonates a current in the coil to excite the process gas into a plasma. The method also involves adjusting the current in each segment to improve the uniformity of RF power coupling in the plasma and improve plasma and process uniformity for applications such as etching and deposition. Overall, this patent provides a way to generate a more consistent and efficient plasma for various chemical reactions.

Problems solved by technology

The single winding monolithic coil, such as that described, above does not provide the same uniformity at all operating pressures.
However, variations in the thickness of the wafer result in sub-standard control of the wafer bowing, thereby reducing the etch uniformity.
A problem with this proposed solution is that once process parameters are adjusted to obtain uniformity, only a small parameter range is typically available for optimizing other etch responses, such as profile.
The disadvantage of this approach is that such modifications are fixed and work best in a limited parameter range.

Method used

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  • Segmented coil for generating plasma in plasma processing equipment
  • Segmented coil for generating plasma in plasma processing equipment
  • Segmented coil for generating plasma in plasma processing equipment

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0023]FIG. 3 is a schematic drawing of a segmented TCP coil configuration according to the invention. As shown in FIG. 3, the TCP coil 50 is divided into two concentric coil segments, each including an inner terminal, an outer terminal and at least one arcuate conductor portion extending between the inner and outer terminals. The two concentric coil segments are electrically connected in series with each other and are electrically connected in series to an RF source (not shown). The coil 50 includes a first inner coil segment 52 and a second outer coil segment 54. An inner tap labeled (+), and an outer tap, i.e. terminal, labeled (−) are provided to facilitate connection to the RF circuitry. An adjustable (i.e., variable) capacitor Ci is connected across the first coil 52 segment to reduce or shunt current that would otherwise flow through the first coil. This segmented coil arrangement allows the plasma uniformity to be varied. This is done by changing the value of Ci, which varies...

second embodiment

[0025]A segmented TCP coil according to the invention is illustrated in FIG. 4. Referring to FIG. 4, instead of shunting the first coil segment 52 with a capacitor Ci, a switch S1 is used to reduce or shunt the current that would otherwise flow through the first coil segment. Using the switch S1, there are two modes of operation. In one mode, the first coil segment 52 and the second coil segment 54 are connected in series when the switch S1 is open and the effects are similar to the FIG. 3 embodiment when the value of Ci is low. In the second mode, the second coil segment 54 is connected in series with a shunted first coil segment 52 when the switch S1 is closed and the effects are similar to the FIG. 3 embodiment when the value of Ci is high.

third embodiment

[0026]FIG. 5 is an illustration of the segmented TCP coil. As shown in FIG. 5, instead of shunting the first coil segment 52, a switch S2 is connected between the second coil segment 54 and the input to the first coil segment 52 to selectively remove the first coil segment 52 from the RF circuitry. Using the switch S2, there are two modes of operation. In the first mode, the first coil segment 52 and the second coil segment 54 are connected in series when the switch S2 is closed and the effects are similar to the FIG. 3 embodiment when the value of Ci is low. In the second mode, the first coil segment 52 is disconnected from the RF circuitry and the second coil segment 54 is connected in series with the RF circuit, when the switch S2 is open, the effect being similar to the FIG. 3 embodiment when the value of Ci is high.

[0027]The segmented TCP coil described in the embodiments above permits control of the plasma processing on different parts of the substrate undergoing treatment. Fo...

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Abstract

A segmented transformer coupled plasma (TCP) coil is provided as a source for generating a uniform plasma in a plasma reactor. The segmented TCP is divided into two or more segment coils which, when connected to an RF source, produces a circulating flow of electrons to cause a magnetic field in the plasma. Because the segmented TCP employs multiple segment coils, a plasma is generated that is more spatially uniform than the plasma produced by a monolithic coil. This is implemented using a power distributing component that allows the RF current to be distributed in the segment coils such that a uniform plasma density can be obtained in an area spanned by the coils. For instance, variable shunts, switchable shunts, and disconnect switches can be used to vary the RF currents in the individual coils.

Description

BACKGROUND OF THE INVENTION[0001]The present invention relates generally to a segmented coil for a transformer coupled plasma (TCP) source. More specifically, the present invention relates to a segmented coil configuration as a source for generating a plasma which can be used for treating semiconductor wafers in low pressure processing equipment.[0002]Plasma generation is useful in a variety of semiconductor fabrication processes, for example enhanced etching, deposition, etc. Plasmas are generally produced from a low pressure gas by inducing an electron flow which ionizes individual gas molecules through the transfer of kinetic energy through individual electron-gas molecule collisions. The electrons are commonly accelerated in an electric field, typically a radio frequency (RF) electric field.[0003]Numerous techniques have been proposed to accelerate the electrons in an RF electric field. For example, U.S. Pat. No. 4,948,458 discloses a plasma generating device in which electrons ...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01J37/32H05H1/30B23K10/00
CPCH01J37/321H05H1/30
Inventor GATES, DUANE, CHARLES
Owner LAM RES CORP