Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for removing photoresist in semiconductor manufacturing process

A technology of photoresist and photoresist layer, which is applied in semiconductor/solid-state device manufacturing, photoplate making process of patterned surface, optics, etc., can solve the problem that photoresist cannot be completely removed, Achieve the effect of small loss of silicon

Inactive Publication Date: 2007-10-17
PSK INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, these high-dose ion-implanted DUV photoresists have a problem that residual photoresist cannot be completely removed by conventional ashing process using oxygen

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing photoresist in semiconductor manufacturing process
  • Method for removing photoresist in semiconductor manufacturing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Now, the present invention will be described in more detail with reference to the accompanying drawings illustrating preferred embodiments. Ashing was done according to the conditions summarized in Table 1 below.

[0028] serial number

o 2

(sccm)

N 2

(sccm)

h 2 / N 2

(sccm)

Processing temperature

degree(℃)

when processing

time (seconds)

Oxide

film thickness

(A)

TEM

image

Process A

7000

800

250

75

17

figure 1

Process B

-

-

8000

250

285

0

figure 2

[0029] Briefly, Process A is a conventional ashing process in which O 2 and N at a flow rate of 800 sccm 2 , the process temperature is 250°C for 75 seconds. After completion of ashing, the thickness of the formed oxide film was measured by transmission electron microscopy. The result is shown in Figure 1. The me...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed herein is a method for removing a photoresist in a semiconductor manufacturing process wherein the removal of a photoresist, i.e. ashing, is carried out using plasma generated from a hydrogen (H2)-containing mixed gas. According to the method, the formation of a silicon oxide film can be minimized, thereby preventing silicon loss without no popping, even residues of a high-dose ion implanted DUV photoresist can be completely removed, and further ashing efficiency can be enhanced.

Description

technical field [0001] The present invention relates to a kind of method for removing photoresist in semiconductor manufacturing process, particularly relate to a kind of method for removing photoresist in semiconductor manufacturing process, wherein adopt from containing hydrogen (H 2 ) The plasma generated in the mixed gas realizes the removal of photoresist, that is, ashing. Background technique [0002] The photolithography process is a kind of semiconductor manufacturing process, which includes the steps of: spin coating a photoresist on a semiconductor substrate, thereby forming a photoresist layer on the substrate; applying the photoresist selectively exposing the layer to light; developing the exposed photoresist layer, thereby forming a photoresist pattern on top of the semiconductor substrate; etching or implanting impurities into the exposed semiconductor substrate part; and photoresist pattern removal (ashing) which acts as a mask in the etching or impurity impl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027G03F7/42H01L21/311
CPCH01L21/31138G03F7/427H01L21/266
Inventor 秋相旭
Owner PSK INC