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Dry etch post process method

一种干蚀刻、处理室的技术，应用在半导体制造工艺领域，能够解决产品电连接错误、良率低、难以完全去除聚合物等问题，达到提高产品良率、避免电连接错误的效果

Inactive Publication Date: 2007-11-28
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to overcome the defect that the dry etching post-processing method in the prior art is difficult to completely remove the polymer, which leads to product electrical connection errors and low yield, the present invention provides a dry etching post-processing method with higher yield

Method used

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Embodiment Construction

[0014] Please refer to FIG. 4 to FIG. 8 , which are schematic diagrams of dry etching to form the source and drain layers (Source electrode & Drain electrode, SD) of the thin film transistor. Please refer to FIG. 4 , which is a deposition step, depositing an SD metal layer 50 on the glass substrate 10 , and then depositing a passivation layer 40 on the SD metal layer 50 and the substrate 10 . Please refer to FIG. 5 , which is a photomask manufacturing process. Photoresist is coated on the passivation layer 40 , and then exposed through a photomask to form a photoresist layer 30 with openings. Please refer to Fig. 6, it is a dry etching step, using O in a dry etching chamber (not shown). 2 , SF 6 and CF 4 The gas etches a portion of the passivation layer 40 to form a contact hole 70, during which a polymer layer 60 is formed and covers the contact hole 70 and the like. Please refer to Figure 7 for post-dry etch processing steps using SF 6 Ashing is performed to remove the p...

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Abstract

This invention relates to a method for dry etching treatment, characterized in using SF6 gas into room, and ashing the surface of product after dry etching treatment and residue on the dry etched wall in room. The method can effectively eliminate the dry-etching residue and guarantee the product quality, clean the device, reduce the times of cleaning and servicing device and lengthen the time of usage.

Description

【Technical field】 [0001] The invention relates to a semiconductor manufacturing process, in particular to a post-dry etching treatment method. 【Background technique】 [0002] Dry etching (Dry Etching) is a processing method widely used in the semiconductor industry. It usually first covers the photoresist layer on the semiconductor layer to be etched, and then uses a photomask to expose the photoresist layer to form a specific pattern, and then introduces a dry etching gas such as O into the etching chamber. 2 , SF 6 and CF 4 Etching the semiconductor layer, and finally forming a predetermined pattern on the semiconductor layer to be etched under the protection of the photoresist layer. [0003] However, during the dry etching reaction, a polymer is generated and deposited on the semiconductor layer. Due to the high resistance of the polymer, it is easy to cause an electrical connection error of the product. It is therefore necessary to employ a post-treatment step for t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L21/311H01L21/00
CPCH01L21/02063
Inventor 邱立峰高胜洲黄荣龙欧振宪黄昌桂陈青枫
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD