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Reluctance type random access memory circuit

A random access memory, magnetoresistive technology, applied in the field of storage arrays, can solve problems such as programming errors, poor reliability, and inability to achieve writing effects

Inactive Publication Date: 2008-07-16
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] That is, if the magnetic field supplied by the data line 16A is too large, although the MRAM cell 10A can write data, other MRAM cells may also be written data, resulting in a programming disturbance.
And when the magnetic field supplied by the data line 16A is too small, the effect of writing data to a specific MRAM unit cannot be achieved.
[0013] However, if the currents of the bit lines and data lines must be controlled so accurately, when there is external magnetic field interference or changes in the external environment (such as temperature, humidity, etc.), programming errors will inevitably occur, which shows that traditional programming requires precise control. The current MRAM mode has the disadvantage of poor reliability

Method used

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  • Reluctance type random access memory circuit
  • Reluctance type random access memory circuit
  • Reluctance type random access memory circuit

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Embodiment Construction

[0036] Reference Figure 4 , Which is a schematic diagram showing a magnetoresistive random access memory cell (MRAM cell) according to an embodiment of the present invention.

[0037] The internal structure of magnetoresistive memory cells 40A and 40B (or called magnetic channel junction unit) is as follows Figure 2A As shown, there are a fixed magnetic axis layer 106, a free magnetic axis layer 102, and an insulating layer (magnetic tunneling junction) 104 disposed between the fixed magnetic axis layer 106 and the free magnetic axis layer 102, and the magnetoresistive memory cells 40A and 40B The magnetoresistance is determined by the direction of the magnetic axis of the fixed magnetic axis layer 106 and the free magnetic axis layer 102. When the magnetic axis directions of the free magnetic axis layer 102 and the fixed magnetic axis layer 106 are in the same direction, the MRAM cell will have low resistance. When the free magnetic axis layer 102 and the fixed magnetic axis la...

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Abstract

A magnetic reluctance type random access memory circuit comprising, a magnetic resistance memory unit having stationary magnetic axis layer and a free magnetic axis layer, and an insulation layer arranged between the stationary magnetic axis layer and the free magnetic axis layer, a bit line coupled directly to the free magnetic axis layer for providing reading current flow during reading movement, and a first switching device and a second switching device coupled between the stationary magnetic axis layer and the programming line, each having a control valve.

Description

Technical field [0001] The invention relates to a storage array, in particular to a storage array of a magnetoresistive random access memory. Background technique [0002] Magnetoresistive random access memory (Magnetic Random Access Memory, hereinafter referred to as MRAM) is a metal magnetic material whose radiation resistance is much higher than that of semiconductor materials. It is a non-volatile memory (Non-volatile Random Access Memory). ), when the computer is powered off or shut down, storage can still be maintained. [0003] MRAM uses magnetoresistance characteristics to store recorded information, and has low energy consumption, non-volatile, and permanent characteristics. The basic principle of its operation is the same as storing data on a hard disk. The data is based on the direction of magnetism and is stored as 0 or 1. The stored data is permanent and will not change until it is affected by the external magnetic field. [0004] figure 1 It is a schematic diagram...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/15
Inventor 邓端理
Owner TAIWAN SEMICON MFG CO LTD