Preparation method of nanometer tungsten trioxide crystallite

A technology of nano-tungsten trioxide and microcrystals, applied in chemical instruments and methods, tungsten oxide/tungsten hydroxide, crystal growth, etc., can solve problems such as complex process, achieve short process flow, continuous and stable operation, and improve performance Effect

Inactive Publication Date: 2008-07-30
TAIYUAN UNIV OF TECH
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The preparation method of nano tungsten trioxide crystallites of the present invention aims at overcoming the defects of complicated technological process in the above-mentioned prior art, and discloses a method for preparing nano-tungsten trioxide crystallites with high purity and uniform particle size distribution by plasma chemical vapor deposition Materials Technology Solutions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of nanometer tungsten trioxide crystallite
  • Preparation method of nanometer tungsten trioxide crystallite
  • Preparation method of nanometer tungsten trioxide crystallite

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0028]Tungsten chloride is used as the basic raw material. The power of the high-frequency plasma generator 1 is 2.5KW; the inner diameter of the high-frequency plasma reactor 2 is 20mm, and the ratio of the length to the inner diameter is 4:1; the inner diameter of the cooler 3 is 75mm, and the ratio of the length to the inner diameter is 4: 1; The stainless steel wire mesh in the product collector 4 is 200 mesh, and the power of the induced draft fan 5 is 250W. The cooling water flows of the upper and lower sections of the high-frequency plasma reactor 2 and cooler 3 are 20l / h, 50l / h and 100l / h respectively; argon is used as the plasma working gas, and the volume flow rates of the gas and cooling gas are 4l / h respectively. min and 12l / min; the flow rate of oxygen in inlet a and inlet c is 1.5l / min and 8l / min respectively; the operating pressure of the regulating system is the vacuum degree of 8mm water column; the setting of tungsten chloride raw material vaporizer The temp...

Embodiment approach 2

[0030] Tungsten chloride is used as the basic raw material. The power of the high-frequency plasma generator 1 is 3KW; the inner diameter of the high-frequency plasma reactor 2 is 25mm, and the ratio of the length to the inner diameter is 3:1; the inner diameter of the cooler 3 is 75mm, and the ratio of the length to the inner diameter is 4:1 ; The stainless steel wire mesh in the product collector 4 is 160 orders, and the power of the induced draft fan 5 is 300W. The cooling water flows of the upper and lower sections of the high-frequency plasma reactor 2 and cooler 3 are 25l / h, 75l / h and 200l / h respectively; with argon as the plasma working gas, the volume flow rates of gas and cooling gas are 5l / h respectively min and 15l / min; the flow rate of oxygen in inlet a and inlet c is 2l / min and 12l / min respectively, and the operating pressure of the regulating system is the vacuum degree of 15mm water column; the set temperature of the tungsten chloride raw material vaporizer is ...

Embodiment approach 3

[0032] Tungsten bromide is used as the basic raw material. The power of the high-frequency plasma generator 1 is 10KW; the inner diameter of the high-frequency plasma reactor 2 is 40mm, and the ratio of the length to the inner diameter is 4:1; the inner diameter of the cooler 3 is 150mm, and the ratio of the length to the inner diameter is 6:1 ; The stainless steel wire mesh in the product collector 4 is 120 orders, and the power of the induced draft fan 5 is 1200W. The cooling water flows of the upper and lower sections of the high-frequency plasma reactor 2 and cooler 3 are 100l / h, 250l / h and 500l / h respectively; with argon as the plasma working gas, the volume flow rates of gas and cooling gas are 20l / h respectively min and 100l / min; the flow rate of oxygen at inlet a and inlet c is 5l / min and 25l / min respectively; the operating pressure of the regulating system is the vacuum degree of 30mm water column; the set temperature of the tungsten bromide raw material vaporizer Th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle diameteraaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

A process for preparing WO3 nanocrystals from tungsten halide by HF plasma CVD method includes the oxidizing reaction in HF plasma jet, and sudden cooling.

Description

1. Technical field [0001] The preparation method of nano tungsten trioxide microcrystals of the present invention belongs to the category of chemical technology and new material synthesis technology. Specifically, the gaseous tungsten halide is injected into an oxygen-rich high-frequency plasma jet atmosphere to prepare nano tungsten trioxide microcrystals. A method for crystalline materials. 2. Background technology [0002] The stable oxides of tungsten mainly include: yellow tungsten (WO 3 ), blue tungsten (WO 2.90 ), violet tungsten (WO 2.72 ) and brown oxide (WO 2 ). Tungsten trioxide is yellow tungsten, which is the complete oxide of tungsten, and is the main raw material for the production of tungsten powder and tungsten carbide in the field of cemented carbide. Nano WO 3 It has a strong absorption capacity for electromagnetic waves, can be used as an excellent absorbing material in the use of solar energy, and can be used as an important invisible material in t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C01G41/02C30B25/00
Inventor 孙彦平王俊文庄壮陈新谋
Owner TAIYUAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap