Method for measuring gallium-manganese-arsenic-iron magnetic transition temperature of rare-magnetic semiconductor without magnetic field

A technology of dilute magnetic semiconductor and transition temperature, which is applied in measurement devices, material analysis by electromagnetic means, instruments, etc., can solve the problems of expensive and time-consuming, cumbersome derivation process, etc., and achieve the effect of easy operation.

A technology of dilute magnetic semiconductor and transition temperature, which is applied in measurement devices, material analysis by electromagnetic means, instruments, etc., can solve the problems of expensive and time-consuming, cumbersome derivation process, etc., and achieve the effect of easy operation.

CN100412536CInactive Publication Date: 2008-08-20INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Method for measuring gallium-manganese-arsenic-iron magnetic transition temperature of rare-magnetic semiconductor without magnetic field
  • Method for measuring gallium-manganese-arsenic-iron magnetic transition temperature of rare-magnetic semiconductor without magnetic field
  • Method for measuring gallium-manganese-arsenic-iron magnetic transition temperature of rare-magnetic semiconductor without magnetic field

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Embodiment Construction

[0018] The method capable of realizing the object of the above invention includes a closed-cycle refrigerator, a constant current source, a voltmeter, and a (Ga, Mn)As sample etched into the shape of a Hall element.

[0019] The present invention is a method for determining the ferromagnetic transition temperature of the dilute magnetic semiconductor gallium manganese arsenic by measuring transport properties, comprising the following steps:

[0020] Step 1: Etching the gallium manganese arsenic sample into the shape of a Hall element, using indium pressure welding technology to make electrodes, which are connected to a constant current source and a voltmeter;

[0021] Step 2: Put the Hall element described in step 1 into a closed-cycle refrigeration system, and the temperature range of the closed-cycle refrigeration system is 10K-300K;

[0022] Step 3: Measure the relationship curve between the tangential resistance of the Hall element and the temperature, determine the phase...

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Abstract

Present invention refers to method determining sparse magnetic semiconductor gallium manganese arsenium ferromagnetic transition thermometric through measuring transport property. It features 1, etching gallium manganese sample to Hall element shape, making electrode adopting indium pressure welding technology, said electrode connected with constant current source and voltmeter, 2, putting Hall element in closed loop refrigeration system, 3, measuring Hall element tangential grinder resistance with thermometric relation curve, determining gallium manganese arsenium conduct characteristic, phase transition temperature from insulativity converting to metallicity, thereby determining gallium manganese arsenium thin-film ferromagnetic transition temperature.

Description

technical field [0001] The invention relates to a method for measuring the ferromagnetic transition temperature of a dilute magnetic semiconductor, in particular to a method for measuring the ferromagnetic transition temperature of a dilute magnetic semiconductor gallium manganese arsenic without a magnetic field. Background technique [0002] Modern information technology utilizes electron charge degrees of freedom in semiconductors to process information, and utilizes electron spin degrees of freedom in magnetic materials to store information, and the two are carried out separately. Semiconductor spintronics attempts to manipulate the degree of freedom of electron spin in semiconductors or simultaneously manipulate the two degrees of freedom of electron spin and electron charge in semiconductors to realize information processing and storage, thereby improving the functions of existing devices and developing a new generation of autonomous devices. spin quantum devices. If ...

Claims

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Application Information

Patent Timeline
20 Aug 2008
Publication
CN100412536C
IPC
G01N27/14; G01N27/00; G01N25/00
Inventors
衡建华; θ’‹ζ˜₯萍