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Polysilicon transverse crystallizing method and polysilicon thin-film transistor manufactured by the same

A polysilicon thin film and transistor technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem that the number of grain boundaries is not easy to reduce, the size of crystal grains is not easy to increase, and it is difficult to increase the mobility of charge carriers in polysilicon And other issues

Active Publication Date: 2009-04-22
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

That is, the crystal grain size is not easy to increase, and the number of grain boundaries is not easy to decrease, and it is difficult to increase the mobility of charge carriers in polysilicon

Method used

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  • Polysilicon transverse crystallizing method and polysilicon thin-film transistor manufactured by the same
  • Polysilicon transverse crystallizing method and polysilicon thin-film transistor manufactured by the same
  • Polysilicon transverse crystallizing method and polysilicon thin-film transistor manufactured by the same

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Embodiment Construction

[0040] The invention provides a polysilicon lateral crystallization method and a polysilicon thin film transistor made by using the crystallization method.

[0041] like figure 1 Shown is a flow chart of an embodiment of the polysilicon lateral crystallization method of the present invention. Step 3001 includes forming a first amorphous silicon layer on a substrate. Step 3003 includes oxidizing the surface of the first amorphous silicon layer to form a silicon oxide layer. Step 3005 includes forming a second amorphous silicon layer on the surface of the silicon oxide layer. Step 3007 includes removing the second amorphous silicon layer and the silicon oxide layer in predetermined areas on the substrate to form reserved areas on the substrate. Step 3009 includes performing a first laser crystallization process to crystallize the predetermined area into a first polysilicon layer and crystallize the reserved area into a second polysilicon layer. Each step is described below. ...

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Abstract

A horizontal-crystallizing method of poly-silicon includes forming the first non-crystal silicon layer on substrate, oxidizing surface of the first non-crystal silicon layer to form silicon oxide layer, forming the second non-crystal silicon layer on silicon oxide layer, removing off the second non-crystal silicon layer and silicon oxide layer at preset block on substrate to from reserving block, carrying out the first laser crystallization process to crystallize preset block to be the first poly-silicon layer and to crystallize reserving block to be the second poly-silicon layer.

Description

technical field [0001] The invention relates to a polysilicon lateral crystallization method; in particular, the invention relates to a polysilicon lateral crystallization method for manufacturing polysilicon thin film transistors. Background technique [0002] Liquid Crystal Displays (LCDs) are widely used in various electronic products such as computers, televisions, and mobile phones. The liquid crystal display is driven by an integrated circuit. Therefore, the operating speed of the transistors of the integrated circuit becomes one of the important factors affecting the performance of the liquid crystal display. [0003] Compared with the charge carriers in amorphous silicon, the mobility of charge carriers in polysilicon is higher. Therefore, polysilicon thin film transistors are widely used in integrated circuits of liquid crystal displays. To increase the mobility of charge carriers in polysilicon, the crystal grain size can be increased, or the number of grain boun...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/20H01L21/268H01L29/786
Inventor 张茂益张志雄郑逸圣陈亦伟
Owner AU OPTRONICS CORP