Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Inclination correcting mechanism of multi hinge nano-stamping pressing die

A technology of nano-imprinting and tilt correction, applied in printing presses, general parts of printing machinery, printing, etc., can solve the problems of deviation, low pressing precision, complicated structure, etc. good repeatability

Inactive Publication Date: 2009-06-10
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing imprinting device, the graphic plane of the stamper can be basically parallel to the plane of the substrate to be pressed after the stamper is pressed down, but there is a problem, that is, when automatically adjusting the graphic plane of the stamper and the substrate to be pressed When the planes of the sheets are parallel, a complicated structure is required, and the plane of the stamper has a slight displacement relative to the plane of the substrate, so that the graphics that have been registered before the pressing are deviated after the embossing, so there is a set pressure Disadvantages of lower precision

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inclination correcting mechanism of multi hinge nano-stamping pressing die
  • Inclination correcting mechanism of multi hinge nano-stamping pressing die
  • Inclination correcting mechanism of multi hinge nano-stamping pressing die

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] Such as figure 1 , 2 As shown, it is the front view of the multi-hinge structure of the embodiment of the present invention and its side sectional view. The present invention consists of an upper connecting sleeve 1, an upper hinge 2, a lower hinge 3, a die 5, a die chuck 4 and a substrate 6. The lower end surface of the upper connecting sleeve 1 is connected with the hinge seat of the upper hinge 2, the hinge seat of the lower hinge 3 is connected with the upper middle frame of the upper hinge 2, the lower middle frame of the lower hinge 3 is connected with the die chuck 4, and the die 5 Installed in the die chuck 4, the substrate 6 is located directly below the die 5. The lower pressure acts on the die 5 through the upper connecting sleeve 1, the upper hinge 2, the lower hinge 3 and the die chuck 4. The sheet 6 is not parallel, the moment generated by the first contact between the die 5 and the substrate 6 causes one or two hinges to rotate slightly, and the non-par...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A multi-hinge slant correcting mechanism for the embossing impression of nano-pattern is composed of upper connection sleeve, upper hinge, lower hinge, embossing impression and chuck of said embossing impression. Their connection scheme is also disclosed. Its advantage is high chromatographic precision.

Description

technical field [0001] The invention relates to a tilt correction mechanism of a multi-hinge nano-imprint stamper, which belongs to the technical field of nano-imprint device equipment for manufacturing nano-graphic structure devices by microfabrication. Background technique [0002] With the progress of the global microfabrication and production technology, a new imprinting technology with simple operation, high resolution, and large-scale production of nano-graphic structures has emerged. This technology is developed from the imprinting technology of microcontact printing and capillary micro-mold pressing. It uses elastic stamps or molds with nano-patterns to print self-assembled monomolecular films on substrates. Since the stamps or molds are elastic When making nano-patterns on large-area substrates, there will be large errors in the uniformity and repeatability of each part of the pattern. At present, further development has been made on the basis of this imprinting te...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00H01L21/00B41K3/00B41M5/26B41F27/00
Inventor 罗先刚陈旭南李海颖胡承刚
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com