Method for preparing sub-atmosphere pressure film

Abstract

The invention discloses a standard normal pressure film manufacturing method. It includes the following steps: inputting ethyl phosphate, triethoxy boron, and tetraethoxy silicane into respective corresponding tube; using carbureting valve to heat up to 137-143 degree centigrade to vaporize the ethyl phosphate; using it the vaporize the other two; adjusting the tube temperature to 105-110 degree centigrade; inducing the vaporized matter into the cavity to react and generate boron-phosphorosilicate glass and by-product. The invention can improve vaporization property by increasing gas tube temperature to 110 degree centigrade, ethyl phosphate to 140 degree centigrade which can not only prolong carbureting valve useful life, but also reduce production cost.

Description

technical field [0001] The invention relates to the field of integrated circuit production and manufacturing, in particular to a method for preparing a quasi-atmospheric pressure film. Background technique [0002] Borophosphosilicate glass (BPSG) has the characteristics of good hole filling and reflow at a certain high temperature, and is often used in interlayer insulating films in the field of integrated circuit manufacturing. In the prior art, triethyl phosphate, triethyl borate and tetraethoxysilane are used to react to produce the above-mentioned borophosphosilicate glass and by-products that can be applied to the interlayer insulating film. [0003] In the existing technology, the temperature of the SA series gasification valve (Injection Valve) and the gas pipeline is set at 100 degrees, but the series series gasification valve will produce SiO2 because tetraethoxysilane TEOS will react with triethyl phosphate TEPO And carbides and deposits are formed at the gasific...

AI Technical Summary

Problems solved by technology

[0003] In the existing technology, the temperature of the SA series gasification valve (Injection Valve) and the gas pipeline is set to 100 degrees, but the series series gasification valve will produce SiO2 because tetraethoxysilane TEOS will react with triethyl phosphate TEPO And carbides and deposits are formed at the gasification valve of triethyl phosphate TEPO, which will block the gasification valve after a long time, or affect the initial concentration of phosphorus and phosphorus

[0004] The traditional temperature setting is easy to make tetraethoxysilane TEOS and triethyl phosphate TEPO react in advance, blocking triethyl phosphate

However, if the temperature of triethyl borate TEB and tetraethoxysilane TEOS is increased, the reaction will be accelerated earlier, and the deposition may be accelerated instead, which will reduce the service life of the vaporization valve and increase the production cost.

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