Thin-film transistor and method for forming same

Abstract

The present invention relates to a thin film transistor and its forming method. The thin film transistor comprises: a substrate, a patterned semiconductor layer, a first patterned dielectric layer, a first patterned conductive layer, a second patterned dielectric layer, a pattern A doped semiconductor layer, at least one spacer, a second patterned conductive layer, a patterned protective layer and a patterned pixel electrode. The forming method of the thin film transistor of the present invention uses microcrystalline silicon as the semiconductor layer of the bottom gate structure and the top gate structure, and a doped semiconductor layer as the electrical contact with the source / drain.

Description

technical field [0001] The present invention relates to a thin film transistor and its forming method, in particular to a microcrystalline silicon thin film transistor structure and its manufacturing method. Background technique [0002] Generally speaking, active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting display (AMOLED) usually use active elements such as thin film transistors (Thin film transistor, TFT). Components (Active element) to be driven. Most of these thin film transistors have a semiconductor silicon film layer, and the semiconductor silicon film layer can be roughly divided into polysilicon (Poly-silicon) film layer, microcrystalline silicon (Microcrystalline silicon, u_Si) film layer and amorphous silicon (Amorphous Silicon, a Si: H) film and other three film layers. In fact, the production of most semiconductor devices currently requires processes such as thin film deposition, lithography, and etching and patterning in or...

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Problems solved by technology

However, due to the difference in stress between heterogeneous materials and the difference in the lattice arrangement of materials, the growth of the above-mentioned layers will be difficult to a certain extent, and when microcrystalline silicon 104 is deposited, the size of its crystals will gradually increase with the deposition time. Big

If the microcrystalline silicon 104 and the amorphous silicon layer 105 are used as the semiconductor channel layer of the thin film transistor, the crystallization result of the interface and the electrical properties of the device will be affected due to the interface problem between the microcrystalline silicon 104 and the gate insulating layer 103.

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