Device for producing low dithering dual wavelength ultrashort light pulse

A generation device and dual-wavelength technology, which is applied in the field of optical communication and ultrafast phenomenon research, can solve the problem of single wavelength of optical pulse, and achieve the effects of high side-mode suppression ratio, stable operation, and low jitter

Inactive Publication Date: 2009-09-23
TAIYUAN UNIV OF TECH
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the optical pulse obtained after the two technologies reduce the jitter is a single wavelength

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for producing low dithering dual wavelength ultrashort light pulse
  • Device for producing low dithering dual wavelength ultrashort light pulse

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0018] Embodiment 1: The DC bias source 1 is connected to the T-type connector 3 with a 10cm-long flexible cable with SMA (male) at one end. The bandwidth of the T-type connector 3 is 5 GHz, and the connection end is SMA (female); the signal source 2 Use a semi-rigid high-frequency cable with SMA (male) length of 6 cm at both ends to connect to the T-type connector 3; the F-P semiconductor laser 4 has a modulation bandwidth of 2.5 GHz, a central wavelength of 1550 nm, and a longitudinal mode interval of 1.0 nm. Built-in refrigerator, no The pins of the multi-mode semiconductor laser with built-in optical isolator are welded on the T-type connector 3; the temperature controller 5 is welded close to the bottom of the F-P semiconductor laser 4; the output pigtail of the F-P semiconductor laser 4 passes through FC / PC The connecting flange is connected to the II end of the optical circulator 6; the III end of the optical circulator 6 is connected to the I end of the optical circulat...

Embodiment approach 2

[0020] Embodiment 2: The DC bias source 1 is connected to the T-type connector 3 by using an 8cm-long flexible cable with SMA (male) at one end. The bandwidth of the T-type connector 3 is 4.5 GHz, and the connection end is SMA (female); the signal source 2. Use a rigid high-frequency cable with SMA (male) length of 5 cm at both ends to connect to the T-type connector 3; F-P semiconductor laser 4 has a modulation bandwidth of 2.0 GHz, a central wavelength of 1555 nm, a longitudinal mode interval of 0.8 nm, a built-in refrigerator, and no The pins of the multi-mode semiconductor laser with built-in optical isolator are welded on the T-type connector 3; the temperature controller 5 is welded close to the bottom of the F-P semiconductor laser 4; the output pigtail of the F-P semiconductor laser 4 passes through FC / PC The connecting flange is connected to the fiber coupler 6; the other two ends of the fiber coupler 6 are respectively connected to the I end of the fiber grating 7 and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Disclosed a generator of low-vibration dual-wavelength ultrashort optical pulse, belongs to the optical communication and the ultra-fast phenomenon study field. It is characterized in that: using a gain switch F-P semiconductor laser whose resonation is controlled by temperature as the main laser; using two DFB semiconductors as external sources to supply the optical filling of main laser and reaching the model select output in the main laser while reducing the vibration of optical pulse effectively; using the optical loop and the fiber grating to reach the separated output of dual-wavelength for attaining the low-vibration dual-wavelength ultrashort optical pulse. The invention realizes the low vibration of gain switch ultrashort optical pulse and the resonate output of dual-wavelength at the same time while it has the advantages of stable output, simple structure, easily to be reached, and wider application.

Description

technical field [0001] The device for generating low-jitter dual-wavelength ultrashort optical pulses of the invention belongs to the field of optical communication and ultrafast phenomenon research. Background technique [0002] Using the gain switch (electrical modulation) method to generate semiconductor laser pulses has the advantages of simple structure, small size, low price, and continuously adjustable pulse repetition frequency. Therefore, gain switch semiconductor lasers are often used in the research of optical communication systems and ultrafast phenomena. as a laser pulse source. However, since this kind of optical pulse is established on the basis of spontaneous radiation in the laser cavity, the fluctuation of spontaneous radiation will cause the randomness of the generation time of the optical pulse, which will lead to the instantaneous change of the repetition frequency of the optical pulse, resulting in the time jitter of the pulse. . The time jitter of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H04B10/12G02F1/35G02B6/27H04B10/508
Inventor 王云才张明江
Owner TAIYUAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap