High voltage metal-oxide-semiconductor transistor and manufacturing method thereof
A technology of oxide semiconductor and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as downsizing and integration of unfavorable integrated circuit components, increasing component area, etc., to reduce the surface area. Effects of electric field, increased current path, increased integration
Inactive Publication Date: 2009-12-02
UNITED MICROELECTRONICS CORP
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Problems solved by technology
Although the formation of isolation structures in high-voltage components can increase the breakdown voltage, this method will increase the area of the components, which is not conducive to the trend of reducing the size of integrated circuit components and increasing the integration level.
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Embodiment Construction
[0047] figure 1 It is a schematic cross-sectional view of a high-voltage metal-oxide-semiconductor transistor according to an embodiment of the present invention.
[0048] Please refer to figure 1 , the high-voltage metal-oxide-semiconductor transistor 100 of this embodiment includes a first-type doped substrate 101, a gate structure 106, a second-type drain region 108a, a second-type source region 108b, a second-type drift region 110a and 110b, the first isolation structures 112a and 112b, and the second isolation structures 114 and 116.
[0049] Wherein, the first-type doped substrate 101 is, for example, a well region or an epitaxial layer, and there are two element isolation structures 118 in the first-type doped substrate 101 . The first isolation structures 112 a and 112 b are respectively configured in the first-type doped substrate 101 . The first isolation structures 112 a and 112 b are, for example, shallow trench isolation structures (shallow trench isolation, ST...
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The invention provides a high-voltage metal oxide semiconductor transistor, comprising a doped substrate, two first separation structures, a grid structure, a source area, a drain area, two separation structures and two shifting areas; wherein, two first separation structures are respectively arranged in the doped substrate; the grid structure is arranged on part of the two first separation structures and the doped substrate between the two first separation structures; the source area and the drain area are respectively arranged in the doped substrate at one side of the two first separation structures; two second separation structures are respectively arranged below the two first separation structures; furthermore, the upper surface of the second separation structure is less than the lower surface of the first separation structure; two shifting areas are respectively arranged in the doped substrate; furthermore, the source area, the drain area, two first separation structures and two second separation structures are surrounded.
Description
technical field [0001] The present invention relates to an integrated circuit element and its manufacturing method, and in particular to a high-voltage metal-oxide-semiconductor transistor and its manufacturing method. Background technique [0002] In integrated circuit components, different circuits require the close cooperation of different circuit elements with different fundamental operating characteristics. Among them, the high-voltage component, as the name suggests, is a component that can withstand higher bias voltage, which means that the breakdown voltage of the high-voltage component will be higher than that of ordinary components. [0003] Conventional high-voltage devices are mainly formed by using an isolation structure to increase the junction breakdown voltage of the source / drain region, so that the high-voltage device can still operate normally under high-voltage conditions. Although the formation of the isolation structure in the high-voltage device can in...
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IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/7833H01L29/0847H01L29/0653
Inventor 吴荣宗陈冠全戴炘吕安泰张堡安
Owner UNITED MICROELECTRONICS CORP