High voltage MOS device model capable of improving temperature effect

Abstract

The invention discloses a high-voltage MOS device model capable of improving temperature effect, which comprises a core MOS device. A first variable resistance is electrically connected between a drain of the core MOS device and the power supply and a second variable resistance is electrically connected between the drain of the core MOS device and the ground. Temperature coefficient is adopted to revise resistance values of the first variable resistance and the second variable resistance. Due to the adoption of the temperature coefficient to revise externally connected variable resistance values of the high-voltage MOS device model, the invention improves the flexibility and accuracy of the model fitting high / low performance of the device, conveniently extracts the temperature effect model parameter on the basis of high-voltage model extracted under normal temperature, greatly improves the simulation precision of high-voltage model to the device temperature property, is helpful to improve the efficiency and accuracy of the integrated circuit design work and shortens the design cycle of the products and reduces the cost.

Description

technical field [0001] The invention relates to a high-voltage MOS device model, in particular to a high-voltage MOS device model that accurately simulates "quasi-saturation effect" under different temperature conditions by adopting a method of externally connecting a variable resistor with a temperature coefficient. Background technique [0002] At present, high-voltage MOS devices are more and more widely used in integrated circuit products, such as liquid crystal display drivers, etc. Therefore, the requirements for accurate and efficient high-voltage MOS device models in high-voltage integrated circuit design have become very urgent. In this context, many high-voltage MOS device models have been developed and gradually applied in the industry. High-voltage MOS device models often use an external variable resistor to simulate the "quasi-saturation effect". [0003] The performance difference between high-voltage MOS transistors and ordinary MOS transistors is mainly mani...

AI Technical Summary

Problems solved by technology

However, in the existing high-voltage MOS device models, there is a lack of model parameters describing the temperature characteristics of the varistor, and the temperature effect of the external varistor has not been corrected, which makes it very difficult for the model to simulate the temperature characteristics of the device. Poor fitting of high and low temperature characteristics

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