Solid-state imaging device and method for manufacturing said solid-state imaging device
A technology of solid-state imaging and equipment, which is applied in semiconductor/solid-state device manufacturing, image communication, electric solid-state devices, etc., and can solve problems such as assembly takes a lot of time and equipment size increases
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no. 1 example
[0180] Such as Figure 1A sectional view of and Figure 1B As shown in the enlarged cross-sectional view of the main part shown in , the solid-state imaging device has a structure in which a glass substrate 201 which is a translucent substrate is bonded to the surface of an IT-CCD substrate 100 including silicon which is a semiconductor substrate the substrate 101, the silicon substrate 101 is provided with the IT-CCD 102 through the spacer 203S to have a gap C corresponding to the light receiving area of the silicon substrate 101, and the peripheral edge of the silicon substrate 101 is individually separated by dicing, and Electrical connection to an external circuit (not shown) can be obtained through a bonding pad BP formed on the surface of the silicon substrate 101 in a peripheral portion exposed outside the glass substrate 201 . The spacer 203S has a height of 10 to 500 μm, and preferably 80 to 120 μm. Also, the spacer width is set to be about 100 to 500 μm.
[0181]...
no. 2 example
[0234] Next, a second embodiment of the present invention will be described.
[0235] In the first embodiment, the dicing groove 104 is formed in advance on the silicon substrate 101 constituting the IT-CCD substrate 100, and by using the spacer 203S made of the same silicon as the solid-state image pickup (pickup) element substrate 100, the IT-CCD The CCD substrate 100 and the sealing cover glass 200 are bonded to each other, and then CMP is performed from the rear to reach the dicing groove 104 so that the thickness of the silicon substrate 101 is reduced, and at the same time, division is performed. The example is characterized in that division is performed without forming dicing grooves on the silicon substrate 101 and maintaining an accurate thickness. Other parts are formed in the same manner as those in the first embodiment.
[0236] More specifically, Figures 4A to 4D Binding and splitting steps are shown. Such as Figure 4A As shown, a silicon substrate 101 is se...
no. 3 example
[0243] Next, a third embodiment of the present invention will be described.
[0244] In the first embodiment, the dicing groove 104 is formed in advance on the silicon substrate 101 constituting the IT-CCD substrate 100, and then CMP is performed from the backside after bonding to reach the dicing groove 104, so that the thickness of the silicon substrate 101 is reduced and at the same time Perform the split. In this example, a spacer 301 formed of a silicon substrate with a thickness of 50 to 700 μm is adhered to the back surface of the silicon substrate 101 through an adhesive layer 302, and a cut groove having a depth touching the spacer 301 is formed after the adhesion. 304.
[0245] Therefore, in the dividing step, the adhesive layer 302 may be softened to eliminate stickiness, thereby removing the spacer 301 .
[0246] Other parts can be formed in the same manner as in the first embodiment.
[0247] More specifically, Figures 5A to 5E Binding and splitting steps are...
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