Electroplating method

Abstract

The invention discloses an electroplating method, which comprises the following steps: putting a wafer to be electroplated into electroplating equipment; descending electrodes and a head cover of theelectroplating equipment to make the electrodes and the wafer immersed into electrolyte in an electrolytic bath of the electroplating equipment; applying current between the electrodes; stopping applying the current between the electrodes; lifting the electrodes and the head cover; washing the wafer by using a water pipe in the electroplating equipment; stopping washing, and performing dry treatment on the wafer; taking off the wafer; and descending the head cover. The electroplating method is adopted to effectively reduce particle contaminant capacity of the surface of the wafer subjected tothe electroplating.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an electroplating method. Background technique [0002] As the critical dimensions of devices shrink, the control of contamination on the wafer surface becomes more and more critical. If pollution sources such as particles are introduced during the production process, it may cause open circuit or disconnection of the circuit. Therefore, in semiconductor process manufacturing, how to avoid pollution in process manufacturing must be paid attention to. With the improvement of equipment automation in production, the interaction between personnel and products becomes less, and the focus of preventing particles in production has been more focused on the particles produced by production equipment. [0003] Taking the formation process of the copper layer as an example, after the semiconductor process technology enters 0.18 microns, the method of electro-chemical pla...

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Problems solved by technology

[0011] The Chinese patent application with the publication number CN1536101A published on October 13, 2004 proposed a new electroplating equipment, which provided an accommodating space in the electroplating tank to reduce the large amount of electroplating solution in contact with air, resulting in electroplating solution Phenomena of aging and deterioration

However, it cannot solve the above-mentioned problem of multiple particle defects on the surface of the wafer after electroplating.

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