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Plasma processing device

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problems of plasma density reduction, processing speed reduction, damage and the like

Inactive Publication Date: 2007-07-25
TOKYO ELECTRON LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reduction of the plasma density in the surrounding part of the spray disk 103 will not only cause the problem of reducing the processing speed, but also cause the problem of damage due to the microwave being directly applied to the substrate 114 to be processed.

Method used

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Examples

Experimental program
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Effect test

no. 1 example

[0041] 2A and 2B are schematic structural diagrams of a microwave plasma processing apparatus 10 according to a first embodiment of the present invention.

[0042] Referring to FIG. 2A, the microwave plasma processing apparatus 10 includes a processing container 11 and a support table 13, the support table 13 is arranged in the processing container 11, and supports the processed substrate 12 by an electrostatic chuck, and the support table 13 Preferably made of AlN or Al formed by hot isostatic pressing (HIP) 2 o 3 In the space 11A surrounding the support table 13 of the processing container 11, at least two , It is preferable to form the exhaust ports 11a at three or more positions. The processing container 11 is exhausted and decompressed through the exhaust port 11a by screw pumps with different inclinations and inclinations.

[0043] The processing container 11 is preferably made of austenitic stainless steel containing Al, and a protective film composed of alumina is f...

no. 2 example

[0067] FIG. 5 is a schematic structural diagram of a plasma processing apparatus 10A according to a second embodiment of the present invention. In FIG. 5 , the same reference numerals are assigned to the previously explained parts, and their descriptions are omitted.

[0068] Referring to FIG. 5, the plasma processing apparatus 10A has a similar structure to the plasma processing apparatus 10, and the distance D between the substrate to be processed 12 and the spray disk 14 is outward in the radial direction of the spray disk 14. However, the processing gas supply part 13 is eliminated in the plasma processing apparatus 10A.

[0069] In the plasma processing apparatus 10B of the above structure, since the lower layer spray plate 31 is omitted, it is not possible to supply processing gas other than the plasma gas for film formation or etching treatment, but by supplying from the spray plate 14 Supplying oxidizing gas or nitriding gas simultaneously with plasma gas can form oxi...

no. 3 example

[0074] FIG. 6 is a schematic structural diagram of a plasma processing apparatus 10B according to a third embodiment of the present invention. However, in FIG. 6 , the same reference numerals are assigned to the previously described parts, and their descriptions are omitted.

[0075] Referring to FIG. 6 , in this embodiment, instead of the spray plate 14 , a spray plate 14 made of porous ceramic such as sintered alumina is used.

[0076] Although the nozzle opening portion 14A of the spray plate 14 in the spray plate 14P is not formed in the spray plate 14P, the plasma gas supply passages 14C and 14B connected to the plasma gas supply port 11P are formed, so that the supplied plasma The gas is uniformly discharged from the plasma gas channel 14B to the space 11B through the air holes in the porous medium spray plate 14 .

[0077] In this embodiment, the lower surface of the spray plate 14P forms an axisymmetric concave surface, and the distance D between the lower surface and...

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Abstract

In a microwave plasma-processing device, a shower plate or plasma penetration window opposed to a board to be processed is recessed on the side opposed to the board to be processed, whereby a decrease in plasma density in the peripheral region of the board to be processed is compensated. As a result, even when plasma processing at low pressure, such as etching, is effected, stabilized uniform plasma is maintained in the vicinity of the surface of the board to be processed. Further, such arrangement enhances ignition of plasma.

Description

[0001] This application is based on the application number 02807490.4, the application date is March 28, 2002, and the applicant is Tokyo Yili Kechuang Co., Ltd., Daimian Tadahiro, a divisional application entitled Invention of Plasma Processing Device. technical field [0002] The present invention relates generally to plasma processing apparatus, and more particularly to microwave plasma processing apparatus. [0003] Plasma processing and plasma processing equipment, for the ultra-small devices with a gate length close to 0.1 μm or less, which are called deep submicron devices or deep submicron devices in recent years It is an indispensable technology for the manufacture of chemical semiconductor devices, or for the manufacture of high-definition flat-panel display devices including liquid crystal display devices. [0004] As a plasma processing device used in the manufacture of semiconductor devices or liquid crystal display devices, various plasma excitation methods have ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/31H01L21/3065H05H1/46H05H1/26H01J37/32B01J19/08C23C16/511H01L21/205H01L21/302
CPCH01J37/3244H01J37/32192H01J37/32238H01L21/3065
Inventor 大见忠弘平山昌树须川成利后藤哲也
Owner TOKYO ELECTRON LTD
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