Hollow cylindrical capacitor and its producing method

Abstract

Column type hollow capacitor is at least composed of substrate, column type hollow low poles, structure layer, up poles, and capacitance dielectric layer. There are plugs on the substrate. Being positioned on the substrate, column type hollow low poles are connected to the plugs electrically. Structure layer surrounds periphery of each column type hollow low pole. Structure layers surrounding two opposite column type hollow low poles respectively are not contacted. Structure layers surrounding two adjacent column type hollow low poles respectively are contacted. Up poles cover each column type hollow low pole respectively. The capacitance dielectric layer is located between each up pole and each column type hollow low pole. The structure layer improves mechanical strength of whole column type hollow capacitor, and increases density of capacitor.

Description

technical field [0001] The present invention relates to a hollow cylindrical capacitor and its manufacturing method, and in particular to a hollow cylindrical capacitor with high mechanical strength and its manufacturing method. Background technique [0002] Semiconductor memory mainly includes transistors and capacitors, and when semiconductor memory enters a process with a high aspect ratio, it means that the available space for capacitors on components is reduced. As the memory space required by computer software grows rapidly, the required capacitors also increase. Therefore, in order to meet such demands, semiconductor process technology must be changed in process technology. [0003] At present, in order to satisfy the requirement that the capacitance value of each cell capacitor is greater than 25fF in DRAM, many methods for increasing the cell capacitance value have been proposed as the design scale shrinks. These methods are mainly divided into two types: 1) using...

AI Technical Summary

Problems solved by technology

However, for hollow column capacitors, as the design scale shrinks, the height of the capacitor column must be increased, which will make the entire capacitor column in an unstable state and easily collapse, thus reducing the product qualification rate

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