Preparation method of 3D bowl-shaped graphene super capacitor electrode material of mixed nanometer structure

A technology of supercapacitors and nanostructures, applied in the manufacture of hybrid capacitor electrodes and hybrid/electric double layer capacitors, etc., can solve the problem that the effective specific surface area of ​​electrode materials cannot continue to increase, the effective area of ​​charge conduction and storage decreases, and the probability of charge annihilation increases and other problems, to achieve the effect of reducing the probability of charge annihilation, reducing the porosity effect, and increasing the storage capacity

Active Publication Date: 2015-01-28
HARBIN INST OF TECH
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Problems solved by technology

[0004] The present invention aims to solve the problem that in the existing graphene preparation method, too high temperature may cause changes in the structural properties of graphene and the formation of graphene wrinkles, which hinders the transmission of charges, increases the probability of charge annihilation, and also leads to charge conduction and storage. The effective area of ​​the electrode material is greatly reduced, and the area of ​​the two-dimensional planar substrate is certain, which limits the amount of graphene that can be deposited, so that the effective specific surface area of ​​the electrode material cannot be continuously improved, and a 3D bowl-shaped mixed nanostructured graphite is provided. Preparation method of olefinic supercapacitor electrode material

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  • Preparation method of 3D bowl-shaped graphene super capacitor electrode material of mixed nanometer structure
  • Preparation method of 3D bowl-shaped graphene super capacitor electrode material of mixed nanometer structure
  • Preparation method of 3D bowl-shaped graphene super capacitor electrode material of mixed nanometer structure

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specific Embodiment approach 1

[0020] Specific embodiment one: the preparation method of a kind of 3D bowl-shaped mixed nanostructure graphene supercapacitor electrode material described in this embodiment, specifically is carried out according to the following steps:

[0021] 1. Put the substrate material in the plasma-enhanced chemical vapor deposition vacuum device, evacuate to a pressure below 5Pa, feed argon gas with a gas flow rate of 65sccm-95sccm, and adjust the vacuuming speed to put the plasma-enhanced chemical vapor deposition vacuum device The medium pressure is controlled at 100Pa~300Pa, and under the pressure of 100Pa~300Pa and argon atmosphere, the temperature is raised to 700℃~900℃ at a heating rate of 30℃ / min;

[0022] 2. Anneal the base material at a temperature of 700°C to 900°C, a pressure of 100Pa to 300Pa and an argon atmosphere, and the annealing time is 15min to 60min;

[0023] 3. Introduce carbon source gas, adjust the gas flow rate of carbon source gas to 5sccm-35sccm, and the gas ...

specific Embodiment approach 2

[0031] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the base material in step 1 is Pt / Ti / SiO 2 / Si multilayer hybrid substrate material. Others are the same as in the first embodiment.

[0032] The base material described in this specific embodiment can be used as a current collector of a supercapacitor.

specific Embodiment approach 3

[0033] Specific embodiment three: the difference between this embodiment and one of specific embodiments one or two is: the thickness of the Pt layer is 150nm-200nm; the thickness of the Ti layer is 20nm; the SiO 2 The layer thickness was 300 nm. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a preparation method of a graphene super capacitor electrode material, in particular to a preparation method of a 3D bowl-shaped graphene super capacitor electrode material of a mixed nanometer structure. The method aims to solve the problems that in an existing graphene preparation method, over-high temperature may cause qualitative changes of a graphene structure and formation of graphene wrinkles, charge transmission is hindered, the charge annihilation probability is increased, the effective area for charge transmission and storage is greatly reduced accordingly, and due to the fact that the area of a two-dimensional plane substrate is definite, the amount of graphene which can be deposited is limited and the effective specific area of electrode materials cannot be increased continuously. The method comprises the steps that a substrate material is placed into a plasma enhanced chemical vapor deposition vacuum device, argon is led into the device, the intensity of pressure is adjusted, temperature rising is conducted, annealing processing is conducted on the substrate material, carbon source gas is led into the device for deposition, and finally, cooling is conducted until room temperature is reached. The preparation method is used for preparing the 3D bowl-shaped graphene super capacitor electrode material of the mixed nanometer structure.

Description

technical field [0001] The invention relates to a preparation method of a graphene supercapacitor electrode material. Background technique [0002] Supercapacitor is a new type of energy storage device, which has the characteristics of high power, high efficiency, long life, and environmental friendliness. Its development and application have good prospects in many fields such as national defense, consumer electronics, and automobile industry. Compared with traditional fuel cells and secondary batteries, supercapacitors have higher power density, so in the automotive industry, they are used in parallel with fuel cells as power systems for electric vehicles. Meanwhile, supercapacitors are widely used in consumer electronics due to their low cost and long cycle life. Although the energy density of supercapacitors is much higher than that of conventional electrolytic capacitors, it is lower than that of fuel cells and secondary batteries, which severely restricts the applicati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/86H01G11/24
CPCY02E60/13H01G11/86H01G11/24
Inventor 亓钧雷王旭张夫费维栋冯吉才
Owner HARBIN INST OF TECH
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