A making method for diffusing blocking layer

Abstract

The related preparation method for diffusion-barrier layer comprises: depositing metal film on a wafer with contact hole, nitrifying the film with nitrogen plasma to form a corresponding nitride film on the metal film, and annealing. This invention overcomes defects in prior art, forms well physical appearance, and improves device performance greatly.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a diffusion barrier layer. Background technique [0002] Before filling the contact hole to form a metal plug, in order to prevent the metal from diffusing or migrating into silicon or silicon dioxide to form a deep energy level and affect the performance of the semiconductor device, it is necessary to make a barrier on the contact hole to prevent the metal from diffusing to Diffusion barrier in silicon or silicon dioxide. [0003] Titanium / titanium nitride film is the diffusion barrier layer commonly used today. When making the diffusion barrier layer, it is necessary to use metal ionization sputtering technology to make titanium ions bombard while depositing under the bias of the bottom of the substrate. , so as to form a titanium film with better physical morphology; or use ordinary physical vapor deposition technology to deposit titanium ...

AI Technical Summary

Problems solved by technology

[0004] The diffusion barrier layer prepared by the above-mentioned common physical sputtering method is easy to form at the entrance of the contact hole such as figure 1 The overhang 1 shown is easy to form when the plug is made in the contact hole later as figure 2 Void 2 shown, which will affect the performance of semiconductor devices

In addition, the production steps are numerous, which reduces the production efficiency

[0005] In order to overcome the problems encountered in the above-mentioned titanium nitride film prepared by the common physical sputtering method, metal oxide chemical vapor deposition (MOCVD) can be used to make a titanium nitride film with good physical morphology, but the metal oxide The equipment and raw materials used in chemical vapor deposition are very expensive, and its production capacity is low, which cannot meet the needs of large-scale industrial production.

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