Polymer electrolytic thin film transistor

A technology of thin film transistors and electrolyte films, which is applied to electric solid devices, circuits, electrical components, etc., can solve the problems of increasing device area and limiting application scope, and achieve the effect of improving output current, broad application prospects and reducing operating voltage.

Active Publication Date: 2007-08-22
GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when the length cannot be smaller, the aspect ratio can only be increased by increasing the channel width, but the increase in width leads to an increase in the device area, which limits its application range.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polymer electrolytic thin film transistor
  • Polymer electrolytic thin film transistor
  • Polymer electrolytic thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Select poly[9,9-dioctylfluorene-9,9-(bis(3'-(N,N-dimethyl)-N-ethylammonium)propyl)fluorene]dibromide and 4,7- The polymer electrolyte (PFNBr-DBT) of bis(N-methylpyrrole)-2,1,3-phenylthiodiazo (DBT) was used to prepare thin film transistors according to the above steps.

[0026] Poly[9,9-dioctylfluorene-9,9-(bis(3'-(N,N-dimethyl)-N-ethylammonium)propyl)fluorene]dibromide and 4,7-di The chemical structural formula of the polymer electrolyte of (N-methylpyrrole)-2,1,3-phenylthiodiazo (DBT) is

[0027]

[0028] Figure 2 and Figure 3 show the output characteristic curve and transfer characteristic curve of the thin film transistor using PFNBr-DBT as the polymer electrolyte layer respectively. Figure 2 shows that the thin film transistors prepared by this method have typical saturation current output characteristics, and the saturation current increases as the gate voltage increases negatively, indicating that the carrier is a hole transport characteristic; Figure 3 shows...

Embodiment 2

[0032] Select poly[9,9-dioctylfluorene-9,9-(bis(3'-(N,N-dimethyl)-N-ethylammonium)propyl)fluorene]dibromide (PFNBr) polymer Electrolyte, prepare thin film transistor (condition is the same as embodiment 1).

[0033] The chemical structural formula of poly[9,9-dioctylfluorene-9,9-(bis(3'-(N,N-dimethyl)-N-ethylammonium)propyl)fluorene]dibromide is

[0034]

[0035] Figure 4 and Figure 5 respectively show the output characteristic curve and transfer characteristic curve of the thin film transistor using PFNBr as the polyelectrolyte layer. The output current tends to be saturated, and the threshold voltage of the transistor is about -1.2V, which is a hole carrier transport characteristic. When the gate bias voltage is equal to -3V, the output current reaches 0.3mA, and the calculated mobility is about 0.1cm 2 / Vs. It can be seen that the output current and mobility are related to the chemical structure of the electrolyte insulating layer.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention discloses a polymer electrolyte film transistor composed of a substrate, a source / leak electrode, a semiconductor active layer, a polymer electrolyte layer and a grid electrode laminated orderly, in which, the material of the polymer electrolyte layer includes a fluorenyl-base chemical structure unit containing composition of a polarity group or ionic group, which takes the polymer electrolyte material as the insulation layer of an organic film transistor to increase the leak output current and reduce working voltage of the transistor.

Description

technical field [0001] The present invention relates to thin film transistors. Background technique [0002] Thin-film transistors are current or voltage switches controlled by electric fields, and are active thin-film devices that control the conductivity of semiconductor materials by changing the applied electric field. With the development of organic thin film electroluminescence (OLED) and liquid crystal flat panel display (LCD) technologies, thin film transistors (OTFT) made of organic materials have developed rapidly in recent years. At present, the application of organic thin film transistors is mainly concentrated in the fields of flat panel display, electronic paper, transaction card, electronic identification label and sensor. Compared with inorganic thin-film transistors, organic thin-film transistors have unique advantages such as low processing temperature, low-cost deposition processes (spin coating, printing, vacuum evaporation, etc.), suitable for large-area...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30
Inventor 彭俊彪曹镛兰林锋
Owner GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap