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Semiconductor photosensor

A photoelectric sensor, semiconductor technology, applied in the direction of semiconductor devices, instruments, circuits, etc., can solve the problem that the short-wave band has not been improved

Inactive Publication Date: 2007-08-29
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] As mentioned above, the spectral sensitivity characteristics are generally improved in the long-wavelength band, but not in the short-wavelength band

Method used

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  • Semiconductor photosensor
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  • Semiconductor photosensor

Examples

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no. 1 example

[0026] FIG. 1 shows a circuit configuration of a semiconductor photosensor according to a first embodiment of the present invention. The semiconductor photosensor has photodiode sections 1 and 2 , amplifiers 3 , 4 and 5 , and an output circuit 6 .

[0027] FIG. 2A shows a longitudinal cross-sectional structure of photodiode sections 1 and 2 .

[0028] Photodiode portion 1 is formed of n-type epitaxial layer 8 formed on p-type semiconductor substrate 7 and p-type diffusion layer 9 formed on the surface of n-type epitaxial layer 8 . A short-wave cut filter 10a is formed on top of the final structure via insulating films 204 and 205, wherein the filter 10a cuts light in the short-wave region.

[0029] The photodiode section 2 has the same photodiode structure as the photodiode section 1 . In addition, an infrared transmission filter 11 and a short-wave cut filter 10b are stacked on top of the final structure via insulating films 204 and 205 . The infrared transmission filter 1...

no. 3 example

[0069] A semiconductor photosensor according to a third embodiment of the present invention will be described below with reference to FIG. 9 showing the arrangement of the photosensor. The semiconductor photosensor includes photodiode sections 1 and 2 , amplifiers 3 , 18 and 19 , a reference voltage generator 20 , a comparison voltage generator 21 , a comparator 22 , and a logic circuit 23 .

[0070] As in the first embodiment, the amplifier 3 subtracts the photocurrent of the photodiode section 1 from the photocurrent of the photodiode section 2, thereby matching characteristics to visual sensitivity.

[0071] Thereafter, the output of amplifier 3 is amplified by amplifiers 18 and 19 and input to comparator 22 .

[0072] The reference voltage generator 20 generates a reference voltage such as a bandgap constant voltage. The comparison voltage generator 21 generates a comparison voltage on the basis of the reference voltage generated by the reference voltage generator 20 . T...

no. 4 example

[0076] 10A shows a cross-sectional structure of a photodiode in a semiconductor photosensor according to a fourth embodiment of the present invention. In the first embodiment described above, the infrared transmission filter 11 and the short-wave cut filter 10b are laminated on top of the photodiode section 2 through the insulating films 204 and 205 in this order.

[0077] However, in the fourth embodiment, the short-wave cut filter 10 b and the infrared transmission filter 11 are stacked sequentially over the insulating film 205 .

[0078] In the photodiode section 2 using this filter stacking order of the fourth embodiment, the short-wave cut filter 10b is formed so as to be close to the epitaxial layer 8 in which the photodiode is formed, as in the photodiode section 1 . Therefore, unlike the first embodiment, light obliquely incident from above photodiode portion 2 passes through short-wave cut filter 10 b under the same conditions as light obliquely incident from above p...

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PUM

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Abstract

According to the present invention, there is provided a semiconductor photosensor having: a first photo detector and a second photo detector formed in a surface portion of a semiconductor substrate; a first resin layer formed on a light-receiving region of the first photo detector, and including a first spectral sensitivity characteristic; a second resin layer formed on a light-receiving region of the second photo detector, and including a second spectral sensitivity characteristic; and an operation circuit which performs a predetermined operation between a first output from the first photo detector and a second output from the second photo detector, and outputs a result of the operation, wherein the first spectral sensitivity characteristic is a characteristic which removes a wavelength component in a short-wavelength region, and the second spectral sensitivity characteristic is a characteristic which removes a wavelength component in an infrared region.

Description

[0001] Cross References to Related Applications [0002] This application is based on and claims priority from Japanese Patent Application No. 2006-45639 filed on February 22, 2006 under 35 USC §119, the entire contents of which are incorporated herein by reference. Background of the invention [0003] A semiconductor photoelectric sensor that outputs a linear signal according to the ambient illuminance is widely used. Especially in mobile phones, such semiconductor photosensors are used to control the on / off of light-emitting diodes (LEDs) in keypads or the backlighting of liquid crystal displays according to ambient illumination. [0004] For example, this semiconductor photosensor is used as an illuminance sensor, which is used to turn off the LED or backlight in the keypad when the environment is bright; to turn on the LED or backlight when the environment is dark, or to perform similar brightness adjustments, Thereby reducing unnecessary power consumption. [0005] In o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/144H01L31/10H01L31/0232
CPCG01J1/32G01J1/0488
Inventor 泷场由贵子铃永浩森英之高桥望
Owner KK TOSHIBA