Unlock instant, AI-driven research and patent intelligence for your innovation.

Symmetric difference induction structure

A dynamic inductive and symmetrical technology, applied in the field of symmetrical differential inductor structure, can solve the problems of increased power consumption, small inductive capacitance, and decreased Q value of differential inductors, so as to reduce power consumption and improve Q value. Effect

Active Publication Date: 2007-09-12
VIA TECH INC
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the differential inductor is in operation, since the wires of the symmetrical spiral loop structure are adjacent to each other and electrically opposite, a large inductive capacitance will be generated between adjacent wires.
In this way, the generated inductive capacitance will cause an increase in power consumption, resulting in a decrease in the Q value of the differential inductor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Symmetric difference induction structure
  • Symmetric difference induction structure
  • Symmetric difference induction structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] FIG. 1 is a top view of a symmetrical differential inductor structure according to an embodiment of the invention. 2A and 2B are top views of the first spiral wire 106 and the second spiral wire 108, respectively. Fig. 3 is a cross-sectional view taken along the line A-A' in Fig. 1. Figure 4 is a top view of the gain wire.

[0026] Please refer to FIGS. 1, 2A, 2B, 3, and 4 at the same time. The symmetrical differential inductance structure 104 is disposed in the dielectric layer 102 on the substrate 100. The symmetrical differential inductance structure 104 can be processed by semiconductor technology. Implementation, therefore, the substrate 100 may be a silicon substrate. The symmetrical differential inductance structure 104 includes spiral wires 106 and 108. The material of the dielectric layer 102 is, for example, silicon oxide or other dielectric materials, and each wire may be made of copper, aluminum-copper alloy, or other materials.

[0027] The spiral wire 106 incl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a symmetrical expression differential inductance structure, and arranged on the basis, the symmetrical expression differential inductance structure includes first spiral-shaped wire and second spiral-shaped wire. The first spiral-shaped wire has the first end and the second end, the second end revolved into the first spiral-shaped wire. The second spiral-shaped wire mutually twines with the first spiral-shaped wire and also symmetric to the symmetry plane disposition, the second spiral-shaped wire has the third end and the four end, the four end revolved into the second spiral-shaped wire and also connected with the second end of first spiral-shaped wire. Among them, when the first spiral-shaped wire which has a same distance from basis interlocked with the second spiral-shaped wire, the first spiral-shaped wire and the second spiral-shaped wire toward the basis direction extends, but reduces the distance of the first spiral-shaped wire and second spiral-shaped wire from the basis.

Description

Technical field [0001] The present invention relates to an inductance structure, and particularly relates to a symmetrical differential inductance structure. Background technique [0002] Inductors are very important passive components. They are often used in radio frequency (RF) circuits, voltage controlled oscillators (VCO), low noise amplifiers (LNA), or power amplifiers. amplifier, PA) and other products. [0003] The size of the inductance is usually related to the number of turns of the wire, the geometry and the material of the magnetic core. The quality factor (Q factor), that is, the Q value, is an important indicator for judging the performance of an inductor. The general formula of the quality factor is as follows: [0004] Q = (stored electric energy) / (consumed electric energy) [0005] It can be seen from the above general formula that increasing the stored electric energy or reducing the consumed electric energy can increase the Q value to improve the performance of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01F17/02H01F27/28H01F41/00
Inventor 李胜源
Owner VIA TECH INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More