Magnetoelectric coupling device
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- CITY UNIVERSITY OF HONG KONG
- Publication Date
- 2007-10-03
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a magnetoelectric coupling device, in particular to a magnetoelectric coupling device with a high magnetoelectric coupling coefficient. Background technique
[0002] In the 1980s, ferromagnetic materials with magnetostrictive effects and piezoelectric materials with piezoelectric effects were formed into composite materials, and the magnetoelectric coupling coefficient was greatly improved. Especially two kinds of materials are made into sheets, and then laminated, the performance is better (C.W.Nan, Phys.Rev.B50, 6082(1994)). The most widely used piezoelectric materials are PbZrO 3 -PbTiO 3 (Lead zirconate titanate, PZT) ceramics, BaTiO 3 Ceramic, (BaSr)Nb 2 o 6 Ceramics, Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -PbTiO 3 (PMN-PT) single crystal, Pb(Zn 1 / 3 Nb 2 / 3 )O 3 -PbTiO 3 (PZN-PT) single crystal, P(VDF-TrFE) polymer, etc.; magnetostrictive materials include Tb 1-x Dy x Fe 2 (Terbium Dysprosium Iron, Terfenol-D), CoFe 2 o 4 ...