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Crystal growth way of crystal pulling method for tantalate

A technology of crystal growth and tantalate, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of not being able to be used as a scintillation single crystal, use, etc.

Active Publication Date: 2007-10-10
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] Due to RETaO 4 The melting point is very high, around 2000 ° C, so far, only LiCl, Li 2 SO 4 etc. as flux to grow RETaO by flux method 4 The growth of small grains reported by this method, the size of small grains grown by this method is only in the order of μm, which cannot be used as a scintillation single crystal

Method used

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Embodiment Construction

[0027] 1. The present invention is a pulling method crystal growth method for several rare earth tantalates, and the molecular formula of the grown compound can be expressed as RE 1-x D. x Ta1-y Nb y o 4 ,in:

[0028] 1.1RE represents rare earth ions Lu, Gd, Y;

[0029] 1.2D represents dopant ions, which are Bi, Ce, Eu, Tb according to different dopant ions;

[0030] 1.3 The subscripts x and y represent the amount of doping substitution, and the value range is 0-1.

[0031] 2. RE 1-x D. x Ta 1-y Nb y o 4 The ingredients method:

[0032] 2.1 When the dopant ions D are Bi and Eu, use D 2 o 3 (D = Bi, Eu), Ta 2 o 5 、RE 2 o 3 (RE=Lu, Gd, Y), Nb 2 o 5 As a raw material, carry out batching according to the following formula:

[0033] 0.5(1-x)RE 2 o 3 +0.5xD 2 o 3 +0.5(1-y)Ta 2 o 5 +0.5yNb 2 o 5 →RE 1-x D. x Ta 1-y Nb y o 4

[0034] 2.2 When the dopant ion D is Ce, use CeO 2 、 Ta 2 o 5 、RE 2 o 3 (RE=Lu, Gd, Y), Nb 2 o 5 As a raw material, carry...

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Abstract

This invention relates to a Czochralski method for growing tantalite crystal. The molecular formula of the grown compound is RE1-xDxTa1-yNbyO4, wherein, RE = Lu, Gd or Y; D = Bi, Ce, Eu or Tb; x and y = 0-1. The raw materials, Ta2O5, Nb2O5, Lu2O3, Gd2O3, Y2O3, Bi2O3, Eu2O3 and Tb4O7 are prepared from other compounds of Ta, Nb, Lu, Gd, Y, Bi, Eu and Tb. The Czochralski method comprises: mixing the raw materials, pressing in a mold into disc shape, and / or sintering at 750-1300 deg.C for 10-24 h to obtain the starting material for RE1-xDxTa1-yNbyO4 crystal. The method can obtain large-size single crystal of Nb5+, Bi3+, Tb3+ or Eu3+-doped RETaO4, which can be used in high-energy physics and nuclear medicine.

Description

technical field [0001] The invention relates to the fields of high-energy physics, nuclear medicine and crystal growth, in particular to a crystal growth method of tantalate by pulling method. technical background [0002] Modern high-energy physics, nuclear medicine and other fields require high-density scintillators, because high-density scintillators have high stopping power and can effectively absorb high-energy particles or rays in a short distance, thereby reducing the number of particles by thousands. The volume of the detection array composed of tens of thousands or even millions of scintillation crystals reduces the construction cost and improves the spatial resolution of the scintillator detector. [0003] High density tantalate LuTaO 4 , GdTaO 4 It is an excellent scintillator luminescent material or luminescent matrix, and their densities are 9.8 and 8.8 g / cm 3 , both exceeding the current heavy scintillator PbWO 4 , LuSiO 4 and LuAlO 3 , YTaO 4 The densit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/30C30B15/00
Inventor 张庆礼殷绍唐刘文鹏孙敦陆邵淑芳
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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