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Method for forming tantalum nitride film

A nitride film and compound technology, applied in gaseous chemical plating, coatings, electrical components, etc., can solve different problems and achieve the effect of high Ta/N composition ratio

Active Publication Date: 2007-12-19
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the usual CVD method, which uses the phenomenon that the precursors in the gaseous state contact each other to cause a reaction, the ALD method is different in that the surface reaction between the two precursors is used.

Method used

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  • Method for forming tantalum nitride film
  • Method for forming tantalum nitride film
  • Method for forming tantalum nitride film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0094] In this example, using the film forming apparatus 1 shown in FIG. 1, penta(dimethylamino)tantalum (MO) gas was used as a source gas, and O 2 gas, and as a reactive gas, use H 2 gas, according to the process flow chart shown in Figure 2 to form a tantalum nitride film.

[0095] According to known methods, in the implementation with SiO 2 After the degassing pretreatment process on the surface of the substrate 12 of the insulating film, utilize a vacuum exhaust system 17 to vacuum exhaust to 10 -5 In the film forming apparatus 1 below Pa, the substrate 12 is carried in (S1). The substrate is not particularly limited, and for example, a substrate in which a voltage is applied to a target having Ta as a main component using Ar sputtering gas according to a common sputtering method to generate plasma and sputter A target is a substrate on which an adhesive layer on the substrate side is formed on the surface.

[0096] After the substrate 12 is carried into the film formi...

Embodiment 2

[0113] In this example, using the film forming apparatus 1 shown in FIG. 2 gas, and the use of H as a reactive gas 2 gas, and form a tantalum nitride film according to the process flow chart shown in FIG. 5 .

[0114] Operated in the same manner as in Example 1, the substrate 12 that had carried out the surface degassing pretreatment process was sent into and utilized the vacuum exhaust system 17 to vacuum exhaust to 10 -5 In the film formation apparatus 1 below Pa (S1).

[0115] After carrying in the substrate 12, depending on the occasion, for example, Ar as a sputtering gas is introduced from the sputtering gas introduction system 20 (S2), a voltage is applied from the voltage application device 19 to the target 18 containing Ta to generate plasma (S3), For the sputtering target 18, a metal thin film, that is, a substrate-side adhesive layer may be formed on the surface of the substrate 12 (S4).

[0116] After the step S4 is completed, the substrate 12 is heated to 250° ...

Embodiment 3

[0127] As the raw material gas, instead of penta(dimethylamino)tantalum, tert-amyliminotris(dimethylamino)tantalum was used, and when the film formation process was carried out according to Example 1, Ta-rich low-resistance tantalum nitride film. For the obtained film, Ta / N=1.8, C content: 1%, N content: 35.7%, and the resistivity of the obtained thin film was 1000 μΩ·cm.

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Abstract

A Ta-rich tantalum nitride film is formed as follows: a raw material gas composed of a coordinate compound wherein an N=(R,R') group (where R and R' may be the same as or different from each other and respectively represent an alkyl group having 1-6 carbon atoms) is coordinated to a Ta element is introduced into a vacuum chamber and adsorbed on a substrate; next an oxygen atom-containing gas is introduced therein for forming a TaOxNy(R,R')z; and then an activated reaction gas is introduced therein for reducing oxygen bonded to Ta while cutting and removing the R(R') group bonded to N. Consequently, a low-resistance tantalum nitride film having low C and N contents, high Ta / N ratio and secure adhesion to a Cu film can be obtained, and this tantalum nitride film is useful as a barrier film. By implanting tantalum particles into the thus-obtained film by sputtering, there can be obtained a still tantalum-richer film.

Description

technical field [0001] The present invention relates to a method for forming a tantalum nitride film, and more particularly, to a method for forming a tantalum nitride film useful as a barrier film for wiring films by ALD (Atomic Layer Deposition: Atomic Layer Deposition). Background technique [0002] In recent years, the demand for microfabrication in thin film manufacturing technology in the semiconductor field has accelerated, and various problems have arisen with it. [0003] Taking thin film wiring processing in semiconductor devices as an example, copper is mainly used as a wiring material because of its low resistivity and other reasons. However, since copper is difficult to etch and easily diffuses in the insulating film of the base layer, there is a problem that the reliability of the device is low. [0004] In order to solve this problem, in the past, a metal thin film (that is, a conductive barrier layer) was formed on the inner wall surface of the interlayer co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34H01L21/3205H01L21/285H01L23/52
CPCC23C16/34C23C16/45527C23C16/45553C23C16/54C23C16/56H01L21/28562H01L21/3215H01L21/76843H01L21/76859H01L21/285H01L23/52C23C16/503C23C16/505H01L21/0262
Inventor 五户成史丰田聪牛川治宪近藤智保中村久三
Owner ULVAC INC
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