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Method for purifying polysilicon, and solidification device

A purification method and polysilicon technology, which are applied in the fields of polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve the problems of complex equipment, low output, and difficult realization.

Inactive Publication Date: 2007-12-26
JACO SOLAR SILICON LONGYAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the equipment is complicated, the output is low, and it is not easy to realize

Method used

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  • Method for purifying polysilicon, and solidification device
  • Method for purifying polysilicon, and solidification device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Put 250kg of 3N metal silicon powder into an intermediate frequency induction furnace, melt it for about 2 hours, pass oxygen for 10 minutes, add 10kg of sodium silicate for 20 minutes, remove slag, heat the silicon liquid to 1550°C, and cast until the polysilicon orientation has been preheated to 1150°C In the graphite container of the solidification device. Then, operate according to the above-mentioned method to raise the temperature of the coke oven to 1300°C, hold for 1 hour, and then adjust the blower to lower the temperature of the coke oven at a rate of 2°C / h. The temperature control requires that the positive and negative deviation is less than 1°C. When the temperature of the coke oven drops to 900°C, stop the blast, and after the natural temperature drops to 600°C, open the cover. When the temperature drops below 80°C, take out the silicon ingot, and then get the purified silicon ingot that has been peeled, broken, and impurity-removed. The part polysilicon 1...

Embodiment 2

[0033]Put 150kg of 3N metal silicon powder into an intermediate frequency induction furnace, melt it for about 1.5 hours, pass oxygen for 10 minutes, add 6kg of sodium silicate for 20 minutes, remove slag, heat the silicon liquid to 1650°C, and cast polysilicon whose temperature has been preheated to 1120°C In the graphite container 4 of the directional solidification device. Then, operate according to the above-mentioned method to raise the temperature of the coke oven to 1400°C, hold for 2 hours, and then adjust the blower to lower the temperature of the coke oven at a rate of 6°C / h. The temperature control requires that the positive and negative deviation is less than 1°C. When the temperature of the coke oven drops to 700°C, stop the blast, and after the natural temperature drops to 560°C, open the cover. When the temperature drops below 80°C, take out the silicon ingot, and then obtain the purified silicon ingot that has been peeled, broken, and impurity-removed. Part of ...

Embodiment 3

[0035] Put 100kg of 3N metal silicon powder into an intermediate frequency induction furnace, melt it for about 1 hour, pass oxygen for 10 minutes, add 4kg of sodium silicate for 20 minutes, remove slag, heat the silicon liquid to 1760°C, and cast to polysilicon orientation that has been preheated to 1110°C In the graphite container 4 of the solidification device. Then, operate according to the above method to raise the temperature of the coke oven to 1450°C, hold for 1.4 hours, and then adjust the blower to make the temperature of the coke oven drop at a rate of 10°C / h, and the temperature control requires that the positive and negative deviation is less than 1°C , until the temperature of the coke oven drops to 820°C, stop the blast, and after the natural temperature drops to 500°C, open the cover, and when the temperature drops below 80°C, take out the silicon ingot, that is, the purified silicon ingot after peeling, crushing, and removing impurities. 51kg of polysilicon in...

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Abstract

This invention relates to a purification method and solidification apparatus for polysilicon. The apparatus is a coke oven, and comprises: a body, a cover, a temperature control system, a fire-resistant heat-preservation layer, a coke combustion chamber, and a graphite container. The method comprises: adding coke into the coke combustion chamber, covering, heating the graphite container to above 1100 deg.C, heating molten silicon to 1550-1800 deg.C, pouring molten silicon into the coke oven, heating the coke oven to 1300-1450 deg.C via a thermocouple, cooling the coke oven to 700-900 deg.C, naturally cooling to below 80 deg.C, and taking out silicon ingots. The apparatus has a simple structure. The method has such advantages as low investment and low energy consumption.

Description

technical field [0001] The invention relates to a polysilicon, in particular to a method and a device which can simply realize the directional solidification of silicon liquid and achieve the purpose of purification. Background technique [0002] In the metal silicon purification technology of smelting, since the segregation coefficient of metal elements in silicon liquid is much less than 1, directional solidification is a very effective means, which can efficiently remove Fe, Al, Ca, Ti in metal silicon , Ni and other metal elements. But the existing directional solidification furnace is expensive and difficult to realize. [0003] In the metal silicon purification technology of smelting, since the segregation coefficient of metal elements in silicon liquid is much less than 1, directional solidification is a very effective means, which can efficiently remove Fe, Al, Ca, Ti in metal silicon , Ni and other metal elements. Wu Yaping et al. (Wu Yaping, Zhang Jian, Gao Xuep...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B28/06C01B33/021
CPCC01B33/037Y02P20/10
Inventor 杨继荣孙坤泽洪永强
Owner JACO SOLAR SILICON LONGYAN CO LTD