Peeling method, semiconductor device, and manufacturing method therefor

[0150] Example 1

[0151] Here, a representative peeling process using the present invention is schematically shown in FIG. 1.

[0152] In FIG. 1A, reference numeral 10 represents a substrate, reference numeral 11 represents a nitride layer or a metal layer, reference numeral 12 represents an oxide layer, and reference numeral 13 represents a peeling layer.

[0153] In FIG. 1A, for the substrate 10, a glass substrate, a quartz substrate, a ceramic substrate, etc. can be used. In addition, a silicon substrate, a metal substrate, or a stainless steel substrate can also be used.

[0154] First, as shown in FIG. 1A, a nitride layer or metal layer 11 is formed on the substrate 10. For the nitride layer or the metal layer 11, representative examples are as follows: selected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os , Ir and Pt, or a single layer composed of alloy materials or compound materials whose main components are the above elements, or a stack of them, or a single layer composed of these nitrides. For example, titanium nitride, Tungsten nitride, tantalum nitride, molybdenum nitride or their stacks. Subsequently, the oxide layer 12 is formed on the nitride layer or the metal layer 11. For the oxide layer 12, silicon oxide, silicon oxynitride, and metal oxide materials can be used as representative examples. For the oxide layer 12, a film formation method such as a sputtering method, a plasma CVD method, and a coating method can be used. In the present invention, it is important that the film stress of the oxide layer 12 and the film stress of the nitride layer or the metal layer 11 be different from each other. The thickness of each film is appropriately set in the range of 1 nm to 1000 nm, and the stress of each film can be adjusted. In addition, in FIG. 1, in order to simplify the process, an example of forming the nitride layer or the metal layer 11 in contact with the substrate 10 is shown, by providing an insulating layer between the substrate 10 and the nitride layer or the metal layer 11. Or a metal layer can enhance the adhesion of the substrate 10.

[0155] Subsequently, a peeling layer 13 is formed on the oxide layer 12 (FIG. 1A). The peeling layer may be a layer containing various elements (thin film diodes, photoelectric conversion elements including silicon PIN junctions, and silicon resistance elements), and is typically TFT. In addition, it is possible to perform heat treatment within a range that the substrate 10 can withstand. It should be noted that in the present invention, even if the film stress of the oxide layer 12 is different from the film stress of the nitride layer or the metal layer 11, film peeling or the like does not occur during the heat treatment in the preparation step of the peeling layer 13.

[0156] Subsequently, the substrate 10 provided on the nitride layer or the metal layer 11 is physically pulled off (FIG. 1B). Since the film stress of the oxide layer 12 is different from the film stress of the nitride layer or the metal layer 11, they can be pulled apart with a small force. In addition, here is shown an example assuming that the peeling layer 13 has sufficient mechanical strength. When the mechanical strength of the peeling layer 13 is insufficient, it is preferable to stick to a support (not shown) to which the peeling layer 13 is fixed before peeling. In this way, the peeling layer 13 formed on the oxide layer 12 is separated from the substrate 10. The state after peeling is shown in Fig. 1C. In the experiment, when a tungsten film with a thickness of 10 nm was used as the metal layer 11, and a silicon oxide film with a thickness of 200 nm was used as the oxide layer 12 by a sputtering method, it was possible to confirm whether the peeling method according to the present invention was peeled. When a 50-nm tungsten film is used as the metal layer 11 and the silicon oxide film has a thickness of 100 nm as the oxide layer 12 by a sputtering method, it can be confirmed whether the peeling method according to the present invention is peeled. When a 50 nm tungsten film is used as the metal layer 11, and the silicon oxide film has a thickness of 400 nm as the oxide layer 12 by a sputtering method, it can be confirmed whether the peeling method according to the present invention is peeled. In addition, after peeling, the peeling layer 13 that was pulled off is stuck on the conveyor (not shown).

[0157] In addition, the present invention is applicable to various manufacturing methods of semiconductor devices. In particular, the use of plastic substrates as the transfer body and support body can be made very light. When the liquid crystal display device is prepared, the support is used as a counter substrate, and the support is attached to the release layer using a sealing member as an adhesive member. At this time, the element provided on the above peeling layer has a pixel electrode, and the liquid crystal material is enclosed between the relevant pixel electrode and the above opposed substrate. In addition, the process sequence for preparing the liquid crystal display device is not particularly limited, and the opposed substrate is attached as a support. After the liquid crystal is injected, the substrate is peeled and pasted on the plastic substrate as a transfer body, or after forming the pixel electrode, the substrate is peeled off, the plastic substrate is pasted as the first transfer body, and the opposite substrate is pasted as the second transfer body.

[0158] In addition, when preparing a light-emitting device represented by a light-emitting device with OLED, it is preferable that the support is made of a sealing medium, and the light-emitting element is completely disconnected from the outside to prevent substances that promote degradation of the organic compound layer, such as moisture, oxygen, etc., from penetrating from the outside. In addition, when preparing a light-emitting device represented by a light-emitting device having an OLED, it is preferable to sufficiently prevent substances that promote degradation of the organic compound layer, such as moisture, oxygen, etc., from penetrating into the support body and the transport body from the outside. In addition, the order of the process for preparing the liquid crystal display device does not have to be particularly limited. After forming the light-emitting element, paste the plastic substrate as a support, peel off the substrate, and paste the plastic substrate as a transfer body, or after forming the light-emitting element, peel off the substrate and paste the plastic substrate as the first transfer body, then paste The plastic substrate serves as the second conveying body.

[0159] Example 2

[0160] For this embodiment, the peeling process of peeling off the substrate while preventing the diffusion of impurities from the nitride layer or metal layer and the substrate by providing an initial covering insulating layer in contact with the peeling layer is schematically shown in FIG. 2. In FIG. 2A, reference numeral 20 represents a substrate, reference numeral 21 represents a nitride layer or a metal layer, reference numeral 22 represents an oxide layer, reference numerals and characters 23a and 23b represent an initial cover insulating layer, and reference numeral 24 represents a peeling layer.

[0161] In FIG. 2A, for the substrate 20, a glass substrate, a quartz substrate, a ceramic substrate, etc. can be used. In addition, a silicon substrate, a metal substrate, or a stainless steel substrate can also be used.

[0162] First, as shown in FIG. 1A, a nitride layer or metal layer 21 is formed on the substrate 20. For the nitride layer or metal layer 21, representative examples are as follows: selected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os , Ir and Pt, or a single layer composed of alloy materials or compound materials whose main components are the above elements, or a stack of them, or a single layer composed of these nitrides, such as titanium nitride, nitride Tungsten, tantalum nitride, molybdenum nitride or their stacks. These can be used. Subsequently, the oxide layer 22 is formed on the nitride layer or the metal layer 21. For the oxide layer 22, silicon oxide, silicon oxynitride, and metal oxide materials can be used as representative examples. For the oxide layer 22, a film forming method such as a sputtering method, a plasma CVD method, and a coating method can be used.

[0163] In the present invention, it is important that the film stress of the oxide layer 22 and the film stress of the nitride layer or the metal layer 21 be different from each other. The thickness of each film is appropriately set in the range of 1 nm to 1000 nm, and the stress of each film can be adjusted. In addition, in FIG. 2, in order to simplify the process, an example of forming a nitride layer or metal layer 21 in contact with the substrate 20 is shown, by providing an insulating layer between the substrate 20 and the nitride layer or metal layer 21 Or a metal layer can enhance the adhesion of the substrate 10.

[0164] Subsequently, initial cover insulating layers 23a and 23b are formed on the oxide layer 22 by a plasma CVD method. Here, the SiH film with a thickness of 50 nm is formed by the plasma CVD method at a film formation temperature of 400°C. 4 , NH 3 And N 2Silicon oxynitride 23a prepared by O (composition ratio Si=32%, O=27%, N=24%, and H=17%), and then stacked and formed by a plasma CVD method at a film forming temperature of 400°C 100nm thick from raw material gas SiH 4 , NH 3 And N 2 0 prepared silicon oxynitride 23b (composition ratio Si=32%, O=59%, N=7% and H=2%). However, it is not particularly limited, and a single layer or a stacked layer having three or more layers may be used. Subsequently, the peeling layer 24 is formed on the initial cover insulating layer 23b (FIG. 2A).

[0165] In this way, when the two initial covering insulating layers 23a and 23b are prepared, in the process of forming the lift-off layer 24, the diffusion of impurities from the nitride layer or the metal layer and the substrate 20 can be prevented. In addition, the initial covering of the insulating layers 23a and 23b can enhance the adhesion between the oxide layer 22 and the peeling layer 24.

[0166] In addition, since the nitride layer or the metal layer 21 and the oxide layer 22 have depressions and protrusions formed on the surface, the surface should be flattened before and after forming the initial cover insulating layer. When flattening, the coverage on the peeling layer becomes better, and when the peeling layer 24 containing the element 24 is formed, since the characteristics of the element become easy to stabilize, it is preferable. It should be noted that for the planarization treatment, a deep etching method in which etching or the like is performed after forming a coating film (resist or the like), a chemical mechanical polishing method (CMP method), or the like can be used.

[0167] Subsequently, the substrate 20 on which the nitride layer or metal layer 21 is provided is physically pulled off (FIG. 2B). Since the film stress of the oxide layer 22 is different from the film stress of the nitride layer or the metal layer 21, it can be pulled off with a small force. In addition, although an example assuming that the peeling layer 24 has sufficient mechanical strength is shown here, when the mechanical strength of the peeling layer 24 is insufficient, it is preferable to attach and fix the support (not shown) of the peeling layer 24 and then peel off.

[0168] In this way, the peeling layer 24 formed on the initial cover insulating layer 22 can be separated from the substrate 20. The state after peeling is shown in Figure 2C.

[0169] However, after peeling, the peeled layer 24 that was pulled off is stuck on the conveyor (not shown).

[0170] In addition, the present invention is applicable to various manufacturing methods of semiconductor devices. In particular, the use of plastic substrates as the transfer body and support body can be made very light. When the liquid crystal display device is prepared, the support is used as a counter substrate, and the support is attached to the release layer using a sealing medium as an adhesive member. At this time, the element provided on the peeling layer has a pixel electrode, and the liquid crystal material is sealed between the relevant pixel electrode and the above opposed substrate. In addition, the process sequence for preparing the liquid crystal display device is not particularly limited, and the opposed substrate is attached as a support. After the liquid crystal is injected, the substrate is peeled and pasted on the plastic substrate as a transfer body, or after forming the pixel electrode, the substrate is peeled off, the plastic substrate is pasted as the first transfer body, and the opposite substrate is pasted as the second transfer body. In addition, when preparing a light-emitting device represented by a light-emitting device with OLED, it is preferable that the support is made of a sealing medium, and the light-emitting element is completely disconnected from the outside to prevent substances that promote degradation of the organic compound layer, such as moisture, oxygen, etc., from penetrating from the outside. In addition, when preparing a light-emitting device represented by a light-emitting device having an OLED, it is preferable to sufficiently prevent substances that promote degradation of the organic compound layer, such as moisture, oxygen, etc., from penetrating into the support body and the transport body from the outside. In addition, the order of the process for preparing the liquid crystal display device does not have to be particularly limited. After forming the light-emitting element, paste the plastic substrate as a support, peel off the substrate, and paste the plastic substrate as a transfer body, or after forming the light-emitting element, peel off the substrate and paste the plastic substrate as the first transfer body, then paste The plastic substrate serves as the second conveying body.

[0171] Example 3

[0172] In this embodiment, in addition to the embodiment 1, an example of performing laser beam irradiation or heat treatment to promote peeling is shown in FIG. 4.

[0173] In FIG. 4A, reference numeral 40 represents a substrate, reference numeral 41 represents a nitride layer or a metal layer, reference numeral 42 represents an oxide layer, and reference numeral 43 represents a peeling layer.

[0174] Since the steps from forming it to preparing the release layer are the same as in Example 1, the description is omitted.

[0175] After the release layer is formed, laser beam irradiation is performed (FIG. 3A). For the laser beam, gas lasers such as excimer lasers, solid-state lasers such as YVO4 lasers, YAG lasers, etc., and semiconductor lasers can be used. In addition, the form of the laser may be continuous oscillation or pulsed oscillation, and the shape of the laser beam may be any of a straight line, a rectangle, a circle, or an ellipse. In addition, the wavelength used can be fundamental, second harmonic, or third harmonic.

[0176] In addition, it is desirable that the material used for the nitride layer or the metal layer 41 is a material that easily absorbs the laser beam, preferably titanium nitride. It should be noted that in order to pass the laser beam, a transparent substrate is used as the substrate 40.

[0177] Subsequently, the substrate 40 on which the nitride layer or metal layer 41 is provided is physically pulled off (FIG. 4B). Since the film stress of the oxide layer 42 is different from the film stress of the nitride layer or the metal layer 41, it can be pulled off with a small force.

[0178] By irradiating and heating the interface between the nitride layer or the metal layer 41 and the oxide layer 42 by the laser beam, the film stress can be changed mutually and the peeling can be promoted, and the peeling can be performed with a small force. In addition, although an example assuming that the peeling layer 43 has sufficient mechanical strength is shown here, when the mechanical strength of the peeling layer 43 is insufficient, it is preferable to attach and fix the support (not shown) of the peeling layer 43 and then peel off.

[0179] In this way, the peeling layer 24 formed on the oxide layer 42 can be separated from the substrate 40. The state after peeling is shown in Fig. 4C.

[0180] In addition, it is not limited to a laser beam, and visible light, infrared light, ultraviolet light, microwave, etc. emitted from a light source such as a halogen lamp can be used.

[0181] In addition, instead of a laser beam, heat treatment may be performed in an electric furnace.

[0182] In addition, heat treatment or laser beam irradiation is performed before attaching the support or before peeling off by the above physical method.

[0183] In addition, this embodiment can be combined with Embodiment 2.