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Peeling method, semiconductor device, and manufacturing method therefor

A semiconductor and device technology, which is applied in the field of peeling off the peeling layer, can solve the problems that it is difficult to prepare a transmissive liquid crystal display device, it is difficult to peel off the peeling layer, etc.

Inactive Publication Date: 2008-01-02
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at this time, it is difficult to prepare transmissive liquid crystal display devices
Moreover, by the method introduced above, it is difficult to peel off the peeled layer with a large area

Method used

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  • Peeling method, semiconductor device, and manufacturing method therefor
  • Peeling method, semiconductor device, and manufacturing method therefor
  • Peeling method, semiconductor device, and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0151] Here, a representative exfoliation process utilizing the present invention is schematically shown in FIG. 1 .

[0152] In FIG. 1A, reference numeral 10 denotes a substrate, reference numeral 11 denotes a nitride layer or a metal layer, reference numeral 12 denotes an oxide layer, and reference numeral 13 denotes a lift-off layer.

[0153] In FIG. 1A, for the substrate 10, a glass substrate, a quartz substrate, a ceramic substrate, or the like can be used. In addition, a silicon substrate, a metal substrate, or a stainless steel substrate may also be used.

[0154] First, as shown in FIG. 1A, a nitride layer or metal layer 11 is formed on a substrate 10. Referring to FIG. For the nitride layer or metal layer 11, representative examples are as follows: selected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os , an element in Ir and Pt, or a single layer composed of alloy materials or compound materials whose main components are the above elements, ...

Embodiment 2

[0160] For this embodiment, the stripping process in which the substrate is stripped away while preventing the diffusion of impurities from the nitride layer or metal layer and the substrate by providing an initial capping insulating layer in contact with the stripping layer is schematically shown in FIG. 2 . In FIG. 2A, reference numeral 20 denotes a substrate, reference numeral 21 denotes a nitride layer or a metal layer, reference numeral 22 denotes an oxide layer, reference numerals and characters 23a and 23b denote an initial covering insulating layer, and reference numeral 24 denotes a peeling layer.

[0161] In FIG. 2A, for the substrate 20, a glass substrate, a quartz substrate, a ceramic substrate, or the like can be used. In addition, a silicon substrate, a metal substrate, or a stainless steel substrate may also be used.

[0162] First, a nitride layer or metal layer 21 is formed on a substrate 20 as shown in FIG. 1A. For the nitride layer or metal layer 21, repres...

Embodiment 3

[0172] In this example, in addition to Example 1, an example of performing laser beam irradiation or heat treatment to promote peeling is shown in FIG. 4 .

[0173] In FIG. 4A, reference numeral 40 denotes a substrate, reference numeral 41 denotes a nitride layer or a metal layer, reference numeral 42 denotes an oxide layer, and reference numeral 43 denotes a lift-off layer.

[0174] Since the steps of forming it up to preparation of the peeling layer are the same as in Example 1, the description is omitted.

[0175] After the release layer was formed, laser beam irradiation was performed (FIG. 3A). For the laser beam, a gas laser such as an excimer laser or the like, a solid-state laser such as a YVO4 laser, a YAG laser or the like, and a semiconductor laser can be used. In addition, the form of laser light can be continuous oscillation or pulse oscillation, and the shape of the laser beam can be any one of straight line, rectangle, circle or ellipse. Furthermore, the wavel...

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Abstract

The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500 DEG C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

Description

[0001] This application is a divisional application of the application dated July 16, 2002, the application number 021261342, and the title of the invention "semiconductor device and peeling method and manufacturing method of semiconductor device". technical field [0002] The present invention relates to a method of peeling off a peeling layer, in particular to a method of peeling off a peeling layer containing a plurality of elements. Furthermore, the present invention relates to a semiconductor device having a constituent circuit of a thin film transistor (hereinafter referred to as TFT) in which a peeled-off peeling layer has been pasted and transferred to a base member, and to a manufacturing method of the semiconductor device. For example, the present invention relates to an electro-optical device represented by a liquid crystal module, a light emitting device represented by an EL module, and an electronic device mounting the devices as a part. [0003] It should be note...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/786H01L21/00H01L33/00
Inventor 高山彻丸山纯矢水上真由美山崎舜平
Owner SEMICON ENERGY LAB CO LTD
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