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Active matrix TFT array substrate and method of manufacturing the same

An array substrate and active matrix technology, applied in the field of active matrix TFT array substrates, can solve the problems of reduced productivity, increased wiring resistance, increased number of processes, etc., and achieves the effect of excellent productivity

Inactive Publication Date: 2008-01-02
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the number of processes increases and productivity decreases.
In addition, due to repeated etching, it also leads to poor control of the channel length and the size of electrodes and wiring, and problems such as increased wiring resistance and even disconnection caused by overetching.

Method used

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  • Active matrix TFT array substrate and method of manufacturing the same
  • Active matrix TFT array substrate and method of manufacturing the same
  • Active matrix TFT array substrate and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0023] FIG. 1 is a plan view showing one pixel portion of an image display region on an active matrix TFT array substrate according to the first embodiment. 2 is a cross-sectional view taken along X-X' of FIG. 1, and is a cross-sectional view of a signal input terminal portion formed outside an image display area of ​​an active matrix TFT array substrate (this portion is not shown in FIG. 1). As the signal input terminal portion, a gate terminal for inputting a scan signal and a source terminal for inputting a video signal are shown in the figure.

[0024] The active matrix TFT array substrate shown in Figures 1 and 2 includes: a transparent insulating substrate 1, a gate electrode 2, a storage capacitor common electrode 3, a gate wiring 4, a gate insulating film 5, a semiconductor active film 6, and an ohmic contact film 7 , drain electrode and pixel electrode 8 a , source electrode 8 b , source wiring 9 b , TFT channel portion 10 , passivation film (interlayer insulating fil...

Embodiment approach 2

[0050] Next, an embodiment different from the active matrix TFT array substrate of the first embodiment described above will be described. In addition, in the following description, the same code|symbol is attached|subjected to the same component as said Embodiment 1, and the description is abbreviate|omitted suitably.

[0051] 5 is a plan view of one pixel in the image display region of the active matrix TFT array substrate according to Embodiment 2. FIG. Fig. 6 is YY' cut-off sectional view among Fig. 5, and is the sectional view of the signal input terminal part that is formed in the outside of the image display area of ​​active matrix type TFT array substrate (in Fig. 5, this part is not shown Show). The active matrix TFT array substrate of Embodiment 2 has the same basic structure as that of the active matrix TFT array substrate of Embodiment 1 above except for the following differences.

[0052]In the second embodiment, the pixel reflective electrode 9 a is formed on a...

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Abstract

An active matrix TFT array substrate includes a gate electrode and a gate line formed from a first metal film over a transparent insulating substrate, a gate insulating film to cover the gate electrode and gate line, a semiconductor layer formed over the gate insulating film, a source electrode and a drain electrode formed over the semiconductor layer and a pixel electrode formed from a transparent conductive film. Either of the source or the drain electrode is formed from the transparent conductive film and the active matrix TFT array substrate further comprises a second metal film thereover mainly including one of Al, Cu and Ag.

Description

technical field [0001] The present invention relates to an active matrix (active matrix) type TFT array substrate, and particularly relates to an active matrix type TFT array substrate for a liquid crystal display device. Background technique [0002] In recent years, in the field of display devices using semiconductor devices, liquid crystal display devices featuring energy saving and space saving are rapidly gaining popularity in place of conventional CRTs. In this liquid crystal display device, a plurality of electrodes, wiring and elements are provided on a transparent insulating substrate. Specifically, the following active matrix type TFT array substrates are being widely used: switching elements such as thin film transistors (TFTs) having scan wiring and signal wiring, gate electrodes and source and drain electrodes are provided In an array, an independent image signal is applied to the electrodes in each display pixel. [0003] On the other hand, since a large numb...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L23/522H01L29/43H01L21/84H01L21/768H01L21/28G02F1/1368
CPCH01L29/41733H01L27/1214H01L27/124G02F1/136286H01L27/1288
Inventor 原田和幸石贺展昭井上和式
Owner MITSUBISHI ELECTRIC CORP