Method of removing photoresist

Abstract

A method includes forming a photoresist pattern over a certain portion of a material layer to expose an ion implantation region, implanting impurities in the ion implantation region of the material layer using the photoresist pattern as an ion implantation barrier, and removing the photoresist pattern using plasma of a gas mixture including a hydrocarbon-based gas.

Description

[0001] This application claims priority to Korean Patent Application Nos. KR2006-62656 and KR2006-90811 filed with the Korean Patent Office on July 4, 2006 and September 19, 2006, respectively, the entire contents of which are incorporated herein by reference. technical field [0002] The present invention relates to methods of manufacturing semiconductor devices, in particular to methods of removing photoresist layers. Background technique [0003] In the manufacture of semiconductor devices, a typical ion implantation process utilizes a photoresist layer as an ion implantation mask. For example, the double poly gate process uses a photoresist layer as an ion implantation mask. [0004] 1A to 1C are cross-sectional views showing a typical double poly gate process. [0005] Referring to FIG. 1A, a substrate 11 is defined as an N-channel metal-oxide-semiconductor (NMOS) region and a P-channel metal-oxide-semiconductor (PMOS) region. A device isolation structure 12 is formed...

AI Technical Summary

Problems solved by technology

[0010] Therefore, in the subsequent process, the tungsten silicide layer 17 may be abnormally oxidized due to the residual photoresist.

Also, after gate patterning, interfacial defects may occur between poly gates and the tungsten silicide layer may form a source of lifting or particles

When the ion implantation process is highly doped, it may not be possible to completely remove the photoresist

To remove the remaining photoresist, the processing time is extended, so the mass yield is reduced

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