Method for identifying whether main reference plane position of silicon chip is correct or not

Abstract

The invention provides a method for identifying whether the location of the main reference surface of a silicon wafer is right, with the following steps: (1) electrifying and preheating an X ray diffractometer; loosing a knob, displacing a detector to 26 DEG 40 MIN and locking the knob; configuring an angle presetting switch to 13 DEG 20 MIN, turning on a vacuum pump switch, putting a sample on a testing table, opening an X ray slot switch, and turning the sample to 13 DEG 20 MIN by hand-wheel; and fine turning the hand-wheel to maximize the indication of the pointer of an mA meter and pressing a reset button. And (2) loosing the knob, displacing the detector to 88 DEG and locking the knob; sticking the main reference surface upwards to a bracket, opening the X ray slot switch, and turning the hand-wheel till the pointer of the mA meter indicates the maximum. If the angle is in the range of 24 DEG 32 MIN plus or minus 7.5 DEG, the location of the main reference surface is right; and if the mA meter has no response or the angle surpasses the range of 24 DEG 32 MIN plus or minus 7.5 DEG, the location of the main reference surface is improper. The method for identifying whether the location of the main reference surface of the silicon wafer is right is simple and feasible with high accuracy.

Description

【Technical field】 [0001] The invention belongs to the technical field of silicon wafer processing, and in particular relates to a method for identifying whether the position of a main reference surface of a silicon wafer is correct. 【Background technique】 [0002] In the process of silicon wafer processing and device production in the field of microelectronics, the reference plane plays the role of identification and positioning. It is the reference plane for dividing silicon wafers into chips. Therefore, the reference plane is one of the important contents of silicon wafer standardization. We know that device production is first to manufacture several separate dies or circuits on the surface of the silicon wafer, and then use dicing to divide the dies or circuits into independent units, and then install these independent units on the bracket, press The upper lead is packaged in the case to make the device. Due to the anisotropic characteristics of silicon crystals, the bes...

AI Technical Summary

Problems solved by technology

The existing problem is: the traditional process relies on visual inspection of the main ridge line of the single crystal to find several main edges of the single crystal, and then draws the position of the main reference surface of the single crystal according to the different crystal orientations. Incorrect recognition of the head and tail of the ingot will lead to errors in the fabrication of the reference surface of the single crystal ing...