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Semiconductor light-emitting device and method of manufacturing the same

一种发光元件、半导体的技术，应用在半导体器件、电气元件、电路等方向，能够解决光取出效果降低等问题，达到缩短距离、提高可靠性的效果

Active Publication Date: 2008-05-21
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0016] Therefore, regardless of the pasting method, the light is absorbed by the electrode or the metal that becomes the reflective layer, and there is a problem that the light extraction effect is lowered.

Method used

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  • Semiconductor light-emitting device and method of manufacturing the same
  • Semiconductor light-emitting device and method of manufacturing the same
  • Semiconductor light-emitting device and method of manufacturing the same

Examples

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no. 1 example

[0133] Fig. 14 is a schematic cross-sectional view showing a semiconductor light emitting element according to a first embodiment of the present invention.

[0134] The above-mentioned semiconductor light-emitting element has: n-type DBR layer 3, n-type Al 0.5 In0.5 P cladding layer 4, quaternary AlGaInP active layer 5, p-type Al 0.5 In 0.5 P cladding layer 6 , p-type GaInP intermediate layer 7 , p-type GaP contact layer 8 , p-type GaP transparent substrate 9 , ohmic electrodes 10 , 11 and reflective layer 12 .

[0135] The above n-type DBR layer 3 consists of 20 pairs of n-type AlAs light reflection layers and n-type Al 0.6 1Ga 0.39 As light reflective layer. In addition, the n-type DBR layer 3 has reflectivity with respect to the emission wavelength of the AlGaInP active layer 5 .

[0136] The above-mentioned AlGaInP active layer 5 emits red light. In addition, the above-mentioned AlGaInP active layer 5 has a quantum well structure. In more detail, the above-mentioned...

no. 2 example

[0172] With respect to the first embodiment described above, the second embodiment is an embodiment in which a support substrate is pasted on the DBR layer via metal.

[0173] Fig. 16 is a schematic cross-sectional view of a semiconductor light emitting element according to a second embodiment of the present invention.

[0174] Semiconductor light-emitting elements have: n-type Al 0.6 Ga 0.4 As current diffusion layer 23, n-type Al 0.5 In 0.5 P cladding layer 24, AlGaInP active layer 25, p-type Al 0.5 In 0.5 P cladding layer 26 , p-type DBR layer 27 , p-type AlGaAs contact layer 28 , ohmic electrodes 29 , 35 , 36 , reflection layer 30 and p-type Si substrate 34 .

[0175] The above-mentioned AlGaInP active layer 25 emits red light. In addition, the above-mentioned AlGaInP active layer 25 has a quantum well structure. In more detail, the above-mentioned AlGaInP active layer 25 is stacked alternately (Al 0.05 Ga 0.95 ) 0.5 In 0.5 P well layer and (Al 0.50 Ga 0.50 ) ...

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PUM

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Abstract

The object of the present invention is to provide a semiconductor light-emitting device has an n-type DBR layer ( 3 ), an n-type cladding layer ( 4 ), an active layer ( 5 ), a p-type cladding layer ( 6 ), a p-type intermediate layer ( 7 ), a p-type contact layer ( 8 ), a p-type transparent substrate ( 9 ), ohmic electrodes ( 10 and 11 ), and a reflecting layer ( 12 ). The n-type DBR layer ( 3 ) has reflectivity for the emission wavelength of the active layer ( 5 ).

Description

technical field [0001] The present invention relates to a semiconductor light emitting element used in, for example, communication, road / railway / guidance display boards or advertising display boards, backlights of mobile phones or displays, lighting fixtures, etc., and a manufacturing method thereof. Background technique [0002] In recent years, the manufacturing technology of semiconductor light-emitting diodes (hereinafter referred to as "LEDs") as a semiconductor light-emitting element has advanced rapidly. Combinations make light of all wavelengths. Therefore, the application range of LED is rapidly expanding, and among them, in the field of lighting, coupled with the improvement of awareness of environmental and energy issues, it is attracting attention as a natural light / white light source that replaces light bulbs and fluorescent lamps. [0003] However, current LEDs have poor conversion efficiency of light with respect to input energy compared with light bulbs and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/10H01L33/30H01L33/40
CPCH01L33/145H01L33/0079H01L33/10H01L33/0093
Inventor 渡边信幸
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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