Forming method of L-shaped side wall

A sidewall, L-shaped technology, used in electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as substrate surface damage, and achieve the effect of improving uniformity and preventing damage.
CN101197264AInactive Publication Date: 2008-06-11SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
Publication Date
2008-06-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a method for reducing substrate surface damage in the L-shaped side wall forming technology and a corresponding forming method for an L-shaped side wall. A partial dry etching and a partial wet corrosion is used to replace the prior dry etching to process a dielectric layer, thus reducing the damage on the substrate surface during etching process. The specific steps are asfollows: forming the L-shaped side wall from a composite dielectric layer which is deposited on the substrate, wherein, the composite dielectric layer comprises a sacrifice layer, a dielectric layer and an oxidized layer. The method for reducing the substrate surface damage is used for etching process of the composite dielectric layer. The method comprises the following steps: removing the dielectric layer which is exposed outside and has certain thickness by the dry etching; and removing the dielectric layer which is exposed outside and has remaining thickness by the wet corrosion.
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Description

technical field

[0001] The invention relates to an integrated circuit process method, in particular to a method for forming an L-shaped side wall. Background technique

[0002] With the continuous shrinking of the feature size of integrated circuits, the spacing between polysilicon gates is also becoming smaller and smaller, which puts forward higher requirements on the filling performance of the dielectric layer before the metal layer. In the technology generation before 0.13um, silicon dioxide containing boron and phosphorus was often used as the filling medium. However, the filling capacity of silicon dioxide containing boron and phosphorus is limited. In order to prolong its service life, the space between polysilicon gates must be increased to make the dielectric easier to fill. The L-shaped side wall is a new technology developed based on this requirement.

[0003] The L-shaped sidewall removes the uppermost layer of silicon oxide and silicon nitride through anisotro...

Claims

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