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Magnetic storage element and memory

A storage element and storage layer technology, applied in the direction of static memory, digital memory information, electrical components, etc., to achieve the effect of reducing current flow, low power consumption, and reducing power consumption

Active Publication Date: 2008-06-18
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it may be necessary to control the current during spin injection

Method used

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  • Magnetic storage element and memory
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[0198] A thermally oxidized film having a thickness of 2 µm was formed on a silicon substrate having a thickness of 0.575 mm, and the memory element 3 having the configuration shown in FIG. 5 was formed on top of the silicon substrate.

[0199] Specifically, the material and film thickness configured as the memory element 3 shown in FIG. 5 are selected for each layer as follows. A Ta film with a thickness of 3 nm was selected as the bottom layer 11 . PtMn with a thickness of 30 nm is selected as the antiferromagnetic layer 12 . A CoFe film with a thickness of 2.2 nm was selected as the ferromagnetic layer 13 . A CoFeB film having a thickness of 2 nm is selected as the ferromagnetic layer 15 of the magnetization fixed layer 31 . A Ru film having a thickness of 0.8 nm was selected as the nonmagnetic layer 14 of the magnetization fixed layer 31 having a laminated ferromagnetic structure. A MgO film with a thickness of 0.8 nm was selected as the tunnel insulating layer 16 . A ...

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Abstract

A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Description

[0001] Cross References to Related Applications [0002] The present invention contains subject matter related to Japanese Patent Application JP 2006-335016 filed in the Japan Patent Office on December 12, 2006, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a memory element comprising: a memory layer in which the magnetization state of a ferromagnetic layer is stored as information; and a magnetization pinned layer in which the magnetization direction is fixed, wherein the Direction Applying current injects spin-polarized electrons to change the magnetization direction of the storage layer. The invention also relates to a memory comprising such a memory element, and is applicable to non-volatile memories. Background technique [0004] High-speed and high-density DRAMs have been widely used as random access memories in information equipment such as computers. [0005] However, since DRAM is a volat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L27/22H01F10/32G11C11/16G11C11/15H10N50/10H10N50/80
CPCG11C11/16H01L43/08H01F10/3272H01L27/228H01F10/3254H01F41/32B82Y25/00H01L43/02H01F10/329H01F41/325G11C11/161H10B61/22H10N50/10G11C11/15G11B5/39H10N50/85H10N50/80
Inventor 肥后丰细见政功大森广之山元哲也山根一阳大石雄纪鹿野博司
Owner SONY CORP
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