Phase-change storage element and manufacturing method thereof

Abstract

The invention relates to a phase transition storage element. A phase transition column is positioned on a first phase transition layer, a second phase transition layer is positioned on the phase transition column, a lower electrode is communicated with the first phase transition layer, and an upper electrode is commuinicated with the second phase transition layer.

Description

Phase change memory element and method of manufacturing the same technical field The present invention relates to a memory element and a manufacturing method thereof, and in particular, to a phase-change memory element and a manufacturing method thereof. Background technique Phase-change memory has competitive advantages in terms of speed, power, capacity, reliability, process integration and cost, and is suitable for use as higher-density stand-alone or embedded storage applications. Due to the unique advantages of phase change storage technology, it is also considered to be very likely to replace the current commercialized highly competitive static storage SRAM and dynamic random access storage DRAM volatile storage and flash non-volatile storage technology, which is expected to become the future. A very promising next-generation semiconductor storage. FIG. 1A shows a phase change memory cell 100 with a conventional T-type structure. As shown in FIG. 1A , the phase-cha...

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Problems solved by technology

However, the heat generated between the heating electrode 104 and the phase change layer 106 of the T-shaped phase change memory cell 100 is easy to be lost from this interface through the dielectric layer or other paths, so the operating current of the phase change memory cannot be effectively reduced.

FIG. 1B discloses another structure of a phase-change memory cell 150. As shown in the figure, a dielectric layer 154 with an opening is formed on the lower electrode 152, and then a phase-change memory material is filled into the opening to form a T-type phase. Next, a protective layer 158 and an upper electrode 160 are formed on the T-shaped phase change layer 156. However, this phase change memory cell structure 150 still cannot effectively avoid or reduce heat loss between the electrode 152 and the phase change layer 156. , and it is not easy to achieve the purpose of reducing the operating current required for reading and writing phase change storage

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