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Capacitance type sensing structure

A capacitive, sensing electrode technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems that affect the accuracy of calculation and sensing values, the short circuit of the sensing structure circuit, and the range of sensing, and achieve saving Spatial configuration, reduced manufacturing cost, and reduced process complexity

Inactive Publication Date: 2014-03-12
DELTA ELECTRONICS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In addition, since the prior art does not have drive electrodes (test electrodes) and mechanical stop points (LimitStop), after the sensing structure is manufactured, it must be carefully operated and tested. When an excessive acceleration change is input, it will cause The sensing structures contact each other to form a short circuit, causing irreversible functional damage
In addition, the feedback control circuit is also designed without the matching of the drive electrode (test electrode), so that when the capacitance value changes in a non-linear manner, it will affect the accuracy of calculating the sensing value and also affect the sensing range.
If the drive electrode (test electrode) is configured separately, additional process and cost will be added, and the circuit layout will be more complicated

Method used

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Embodiment Construction

[0036] A capacitive sensing structure according to a preferred embodiment of the present invention will be described below with reference to related drawings, wherein the same elements will be described with the same reference symbols.

[0037] Please refer to Figure 3 to Figure 7 As shown, a capacitive sensing structure 2 of a preferred embodiment of the present invention includes a substrate 20 , a sensing electrode layer 21 and a conductor 23 . In this embodiment, the capacitive sensing structure 2 is manufactured using CMOS technology, and it can be used as an accelerometer, or applied to a gyroscope or a micro-electromechanical system (MEMS). In the following, the capacitive sensing structure 2 is used as the acceleration sensor as an example for illustration, but it is not limited thereto.

[0038] The sensing electrode layer 21 is disposed on the base material 20 using a CMOS process (such as Figure 4 and Figure 5 shown). The substrate 20 can be selected from a s...

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Abstract

The invention discloses a capacitance sensing structure, including a parent metal, a sensing electrode layer and at least one pile layer and a conductive body. The sensing electrode layer is formed onor in the parent metal. The pile layer is formed on the sensing electrode layer. The conductive body is correspondingly arranged on the sensing electrode layer and the pile layer.

Description

technical field [0001] The present invention relates to a sensing structure, in particular to a capacitive sensing structure. Background technique [0002] With the improvement of semiconductor process technology, the use of complementary metal oxide semiconductor (Complementary Metal-Oxide Semiconductor, CMOS) process technology to produce micro-electromechanical devices (Micro-electromechanical device) for application in micro-electromechanical systems (Micro-electromechanical System, MEMS) ), has become one of the commonly used techniques in this field. [0003] In the prior art, a suspended conductive structure is used as a sensing unit to manufacture micro-electromechanical components. After receiving an external action, the suspended conductive structure is actuated, and a relative change occurs between the fixed conductive structure, and the change can be sensed. Calculate the sensing value. The following is an example of a capacitive micro-accelerometer. It uses th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L49/00H10N99/00
Inventor 王宏洲谢协伸梁朝睿李政璋王朝庆袁宗廷陈煌坤邢泰刚
Owner DELTA ELECTRONICS INC