Method for fabricating CMOS image sensor
A technology of an image sensor and a manufacturing method, which is applied in the manufacturing of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve problems such as difficulty in achieving concentration distribution, limitation of boron (B) diffusion, etc.
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[0037] Hereinafter, exemplary embodiments according to the present invention will be described in detail with reference to the accompanying drawings.
[0038] Reference Figure 2A to Figure 2E , Showing a cross-sectional view of a method of manufacturing a CMOS image sensor according to the present invention.
[0039] Such as Figure 2A As shown, an epitaxial process is used to form a low concentration of P on the semiconductor substrate 101 - Type epitaxial layer 102, in which the semiconductor substrate 101 is, for example, a high-concentration P ++ Type single crystal silicon.
[0040] The epitaxial layer 102 is formed to have a large and deep depletion region in the photodiode, thereby enhancing the ability of the low-voltage photodiode to collect light charges and also improving its light sensitivity.
[0041] After that, the active region and the device isolation region are defined in the semiconductor substrate 101. Then, a device isolation film 103 is formed in the device ...
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